现代电子技术2024，Vol.47Issue(12)：15-20,6.DOI:10.16652/j.issn.1004-373x.2024.12.003
非分段GaN HEMT EF2类功率放大器理论研究
Theoretical research on non-segmented GaN HEMT EF2 class power amplifier
于莉媛 1徐国龙 1褚泰然2
作者信息
- 1. 天津工业大学 电子与信息工程学院,天津 300000
- 2. 国网吉林省电力有限公司,吉林 白山 134300
- 折叠
摘要
Abstract
The simulation model of enhanced gallium nitride high electron mobility collective tube(GaN HEMT)suffers from long simulation time,high complexity and bad convergence.In order to improve the simulation convergence and accuracy of GaN HEMT devices in power electronic circuits,a non segmented GaN HEMT SPICE model is proposed.The modeling of static and dynamic characteristics of GaN HEMT devices is conducted by means of the non-segmented continuous equations.The simulation of output characteristics of GaN HEMT is conducted and compared with the simulation results of Si MOSFET.The simulation results show that the proposed model has good convergence,fast convergence speed and high accuracy.The effect of this model on the transmission efficiency is investigated in an EF2 class power amplifier.The simulation results further show that the model has good convergence,and when the switching frequency is 10～20 MHz and the input power is 75 W,the output power can reach 73 W and the transmission efficiency is 95%,which also proves that GaN HEMT devices can improve the transmission efficiency of EF2 class power amplifiers.关键词
GaN HEMT/EF2类放大器/I-V特性/电子电路/Si MOSFET/传输效率Key words
GaN HEMT/EF2 class power amplifiers/I-V characteristics/electronic circuits/Si MOSFET/transmission efficiency分类
电子信息工程引用本文复制引用
于莉媛,徐国龙,褚泰然..非分段GaN HEMT EF2类功率放大器理论研究[J].现代电子技术,2024,47(12):15-20,6.
