非分段GaN HEMT EF2类功率放大器理论研究OA北大核心CSTPCD
Theoretical research on non-segmented GaN HEMT EF2 class power amplifier
目前,增强型氮化镓高电子迁移率晶体管(GaN HEMT)的仿真模型存在仿真时间长、复杂度高且收敛性不好等问题.为了解决GaN HEMT器件在电力电子电路中仿真收敛性和准确性差的问题,提出一种非分段的GaN HEMT SPICE模型.使用非分段连续方程对GaN HEMT器件的静态和动态特性进行建模;再对GaN HEMT的输出特性进行仿真,并与Si MOSFET的仿真结果进行对比.仿真结果表明,所提模型的收敛性较好,收敛速度快,有较高的准确性.另外,将此模型应用于EF2类功率放大器中,研究该模型对传输效率的影响.仿真结果进一步表明:该模型具有良好的收敛性;且当开关频率为10～20 MHz,输入功率为75 W时,输出功率可达73 W,传输效率为95%,这也证明了GaN HEMT器件可以提高EF2类功率放大器的传输效率.
The simulation model of enhanced gallium nitride high electron mobility collective tube(GaN HEMT)suffers from long simulation time,high complexity and bad convergence.In order to improve the simulation convergence and accuracy of GaN HEMT devices in power electronic circuits,a non segmented GaN HEMT SPICE model is proposed.The modeling of static and dynamic characteristics of GaN HEMT devices is conducted by means of the non-segmented continuous equations.The simulation of output characteristics of GaN HEMT is conducted and compared with the simulation results of Si MOSFET.The simulation results show that the proposed model has good convergence,fast convergence speed and high accuracy.The effect of this model on the transmission efficiency is investigated in an EF2 class power amplifier.The simulation results further show that the model has good convergence,and when the switching frequency is 10～20 MHz and the input power is 75 W,the output power can reach 73 W and the transmission efficiency is 95%,which also proves that GaN HEMT devices can improve the transmission efficiency of EF2 class power amplifiers.
于莉媛;徐国龙;褚泰然
天津工业大学 电子与信息工程学院,天津 300000国网吉林省电力有限公司,吉林 白山 134300
电子信息工程
GaN HEMTEF2类放大器I-V特性电子电路Si MOSFET传输效率
GaN HEMTEF2 class power amplifiersI-V characteristicselectronic circuitsSi MOSFETtransmission efficiency
《现代电子技术》 2024 (012)
15-20 / 6
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