现代应用物理2024，Vol.15Issue(2)：1-17,17.DOI:10.12061/j.issn.2095-6223.2024.020101
深能级瞬态谱技术在Ⅲ-Ⅴ族太阳电池辐照损伤微观分析中的应用
Deep Level Transient Spectroscopy Technique Applied to Microscopic Analysis of Radiation Damage of Ⅲ-Ⅴ Compound Solar Cells
摘要
Abstract
In this paper,the application of deep level transient spectroscopy(DLTS)technique in microscopic analysis of radiation damage of GaAs,GaInP and multi-junction solar cells is introduced.The role of DLTS technique in the influence of annealing on the main traps in GaAs and GaInP is reviewed.The testing methods such as DLTS,time-resolved photoluminescence(TRPL),photoluminescence spectroscopy(PL),and the application of computer simulation in subsequent research are summarized.This paper can provide reference for the study of particle irradiation-induced defects in solar cells and its impact mechanisms.关键词
深能级瞬态谱/缺陷/辐照损伤/Ⅲ-Ⅴ族太阳电池/损伤机理Key words
deep level transient spectroscopy(DLTS)/defect/radiation damage/Ⅲ-Ⅴ compound solar cells/damage mechanism分类
能源科技引用本文复制引用
李盟,艾尔肯·阿不都瓦衣提,王忠旭,唐光海,张淑艺,王亭保,杨鑫,庄玉..深能级瞬态谱技术在Ⅲ-Ⅴ族太阳电池辐照损伤微观分析中的应用[J].现代应用物理,2024,15(2):1-17,17.基金项目
国家自然科学基金资助项目(U2330121) （U2330121）
云南省科技厅重点基金资助项目(202201AS070019) （202201AS070019）
