现代应用物理2024，Vol.15Issue(2)：26-33,41,9.DOI:10.12061/j.issn.2095-6223.2024.020202
碲锌镉晶体的铟碲共掺杂退火研究
Study on Indium-Tellurium Co-Doping Annealing in CdZnTe Crystals
摘要
Abstract
The high density of defects within the CdZnTe crystals in the growth state,such as tellurium(Te)inclusions,could degrade the electrical performance of CdZnTe room-temperature nuclear radiation detectors.In this paper,the effect of indium-tellurium co-doping annealing on the Te inclusions and electrical properties of CdZnTe crystals is studied.First,the diffusion process of indium atoms in CdZnTe crystals at different diffusion temperatures is simulated by molecular dynamics,and the expression of diffusion coefficients of indium atoms is obtained.Then,the theoretical time required for indium atoms to diffuse into CdZnTe crystals is calculated,based on which indium-tellurium co-doping annealing experiments are carried out to further optimize the annealing process.The experimental results show that the Te intercalation density of the CdZnTe crystals decreases to 27.61 mm-2 after 70 h indium-tellurium co-doping annealing,the bulk resistivity increases to about 1011 Ω·cm,and the leakage current is below 4 nA(400 V).The electrical properties of the crystal meet the requirements for nuclear radiation detector applications.关键词
碲锌镉/分子动力学模拟/退火/碲夹杂/电学性能Key words
CdZnTe/molecular dynamics simulation/annealing/Te inclusions/electrical property分类
能源科技引用本文复制引用
戴伟,雷宇,李州,王许琛,宋宏甲,钟向丽,王金斌..碲锌镉晶体的铟碲共掺杂退火研究[J].现代应用物理,2024,15(2):26-33,41,9.基金项目
国家自然科学基金资助项目(12275230,12027813) （12275230,12027813）
湖南省研究生科研创新项目资助(QL20230148) （QL20230148）
