现代应用物理2024，Vol.15Issue(2)：103-107,5.DOI:10.12061/j.issn.2095-6223.2024.020402
基于Back-n白光中子实验装置的SRAM翻转截面测量
Measurement of Single Event Upset Cross Section of Static Random Access Memories at the CSNS Back-n Facility
摘要
Abstract
In this paper,a more convenient method for measuring the single event upset(SEU)cross section of SRAM at the CSNS Back-n facility is proposed.According to the placement of polyethylene neutron moderating material in front of the SRAM,the energy spectrum of neutron incident on the surface of the SRAM is changed,and the changed neutron energy spectrum is obtained by simulation.The SEU cross section of SRAM is obtained by solving the matrix equation of the upset rate by singular value decomposition method.The results show that in the energy range of 4 MeV to 15 MeV,the SEU cross section information of SRAM measured at the CSNS Back-n facility and fitted with monoenergic neutron source in the references is basically consistent.关键词
中子能谱/准单能中子源/单粒子效应/SRAM翻转截面/奇异值分解Key words
neutron energy spectrum/quasi-monoenergetic neutron source/single event upset/cross section/singular value decomposition分类
数理科学引用本文复制引用
刘毓萱,秋妍妍,谭志新,易晗,贺永宁,赵小龙,樊瑞睿..基于Back-n白光中子实验装置的SRAM翻转截面测量[J].现代应用物理,2024,15(2):103-107,5.基金项目
广东省基础与应用基础研究基金资助项目(2021B1515120027) （2021B1515120027）
粒子探测与电子学国家重点实验室资助项目(SKLPDE-ZZ-202008) （SKLPDE-ZZ-202008）
