中国电机工程学报2024，Vol.44Issue(11)：4426-4434,中插21,10.DOI:10.13334/j.0258-8013.pcsee.230634
功率半导体器件频域热流模型及特性
Frequency-domain Thermal Modelling of Heat Flow for Power Semiconductor Devices and Its Characteristics
徐梦琦 1蔡恬乐 1马柯 1周党生2
作者信息
- 1. 电力传输与功率变换控制教育部重点实验室(上海交通大学电气工程系),上海市 闵行区 200240
- 2. 深圳市禾望电气股份有限公司,广东省 深圳市 518000
- 折叠
摘要
Abstract
The thermal stress of power semiconductor devices is a significant contributor to their failures,so thermal modeling of devices has received increasing attention in recent years.Due to the complexity of operating conditions,the thermal stress of power semiconductor devices has different characteristics under different timescales,making it difficult to model.To address this issue,many efforts have been undertaken in recent theses years,and frequency-domain modeling is a relatively simple and practical approach.However,most existing methods only focus on the temperature characteristics of the device while ignoring the heat flow characteristics,which leads to inaccurate temperature prediction when the device's thermal model is connected to external heat dissipation conditions.In this paper,the low-pass filter characteristics of heat flow in power semiconductor devices are first analyzed by frequency-domain analysis,and proposes a multi-order three-frequency low-pass filter to describe the device's thermal flow characteristics.The multi-order three-frequency low-pass filter is able to describe the thermal flow characteristics of the power semiconductor device in full frequency band.The proposed approach improves the accuracy of device thermal stress description and solves the problem of connecting the device model with external heat dissipation conditions.The proposed method is validated through finite element simulation and experiments.关键词
功率半导体器件/频域分析/有限元/热模型Key words
power semiconductor device/frequency-domain analysis/finite element method/thermal model分类
信息技术与安全科学引用本文复制引用
徐梦琦,蔡恬乐,马柯,周党生..功率半导体器件频域热流模型及特性[J].中国电机工程学报,2024,44(11):4426-4434,中插21,10.
