Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrateOACSTPCDEI
Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.
Tiantian Luan;Sen Huang;Guanjun Jing;Jie Fan;Haibo Yin;Xinguo Gao;Sheng Zhang;Ke Wei;Yankui Li;Qimeng Jiang;Xinhua Wang;Bin Hou;Ling Yang;Xiaohua Ma;Xinyu Liu;
High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Be i-jing 100029,China School of integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,ChinaFaculty of integrated Circuits,Xidian University,Xi’an 710071,China
电子信息工程
AlGaN/GaN heterostructureultrathin-barrierenhancement-moderadio-frequencypower added efficiencysilicon substrate
《Journal of Semiconductors》 2024 (006)
P.81-86 / 6
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
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