首页|期刊导航|Journal of Semiconductors|Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu

Journal of Semiconductors2024，Vol.45Issue(6)：P.81-86,6.

Journal of Semiconductors2024，Vol.45Issue(6)：P.81-86,6.DOI:10.1088/1674-4926/23120006

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Tiantian Luan ¹Sen Huang ¹Guanjun Jing ¹Jie Fan ¹Haibo Yin ¹Xinguo Gao ¹Sheng Zhang ¹Ke Wei ¹Yankui Li ¹Qimeng Jiang ¹Xinhua Wang ¹Bin Hou ²Ling Yang ²Xiaohua Ma ²Xinyu Liu¹

作者信息

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Be i-jing 100029,China School of integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China
2. Faculty of integrated Circuits,Xidian University,Xi’an 710071,China
折叠

摘要

关键词

AlGaN/GaN heterostructure/ultrathin-barrier/enhancement-mode/radio-frequency/power added efficiency/silicon substrate

分类

信息技术与安全科学

引用本文复制引用

Tiantian Luan,Sen Huang,Guanjun Jing,Jie Fan,Haibo Yin,Xinguo Gao,Sheng Zhang,Ke Wei,Yankui Li,Qimeng Jiang,Xinhua Wang,Bin Hou,Ling Yang,Xiaohua Ma,Xinyu Liu..Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate[J].Journal of Semiconductors,2024,45(6):P.81-86,6.

基金项目

supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400 （）

in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS) （CAS）

in part by CAS-Croucher Funding Scheme under Grant CAS22801 （）

in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208 （）

in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018 （）

in part by the University of CAS （）

in part by IMECAS-HKUST-Joint Laboratory of Microelectronics. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航