Control of GaN inverted pyramids growth on c-plane patterned sapphire substratesOACSTPCDEI
Growth of gallium nitride(GaN)inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets.In this work,GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates(PSS)by metal organic vapor phase epitaxy(MOVPE).The influences of growth conditions on the surface morphol-ogy are experimentally studied and explained by Wulff constructions.The competition of growth rate among{0001},{1011},and{1122}facets results in the various surface morphologies of GaN.A higher growth temperature of 985 ℃ and a lowerⅤ/Ⅲratio of 25 can expand the area of{}facets in GaN inverted pyramids.On the other hand,GaN inverted pyramids with almost pure{}facets are obtained by using a lower growth temperature of 930℃,a higherⅤ/Ⅲratio of 100,and PSS with pattern arrangement perpendicular to the substrate primary flat.
Luming Yu;Xun Wang;Zhibiao Hao;Yi Luo;Changzheng Sun;Bing Xiong;Yanjun Han;Jian Wang;Hongtao Li;Lin Gan;Lai Wang;
Beijing National Research Center for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Bei-jing 100084,ChinaBeijing National Research Center for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Bei-jing 100084,China Center for Flexible Electronics Technology,Tsinghua University,Beijing 100084,China
电子信息工程
inverted pyramidsGaNMOVPEcrystal growth competition model
《Journal of Semiconductors》 2024 (006)
P.92-96 / 5
the National Key Research and Development Program(2021YFA0716400);the National Natural Science Foundation of China(62225405,62350002,61991443);the Key R&D Project of Jiangsu Province,China(BE2020004);the Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics.
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