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Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Luming Yu Xun Wang Zhibiao Hao Yi Luo Changzheng Sun Bing Xiong Yanjun Han Jian Wang Hongtao Li Lin Gan Lai Wang

Journal of Semiconductors2024，Vol.45Issue(6)：P.92-96,5.

Journal of Semiconductors2024，Vol.45Issue(6)：P.92-96,5.DOI:10.1088/1674-4926/24010013

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Luming Yu ¹Xun Wang ¹Zhibiao Hao ²Yi Luo ²Changzheng Sun ²Bing Xiong ²Yanjun Han ²Jian Wang ²Hongtao Li ²Lin Gan ²Lai Wang²

作者信息

1. Beijing National Research Center for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Bei-jing 100084,China
2. Beijing National Research Center for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Bei-jing 100084,China Center for Flexible Electronics Technology,Tsinghua University,Beijing 100084,China
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摘要

关键词

inverted pyramids/GaN/MOVPE/crystal growth competition model

分类

信息技术与安全科学

引用本文复制引用

Luming Yu,Xun Wang,Zhibiao Hao,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Lin Gan,Lai Wang..Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates[J].Journal of Semiconductors,2024,45(6):P.92-96,5.

基金项目

the National Key Research and Development Program(2021YFA0716400) （2021YFA0716400）

the National Natural Science Foundation of China(62225405,62350002,61991443) （62225405,62350002,61991443）

the Key R&D Project of Jiangsu Province,China(BE2020004) （BE2020004）

the Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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