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An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

Yiling Xie Baochuang Wang Dihu Chen Jianping Guo

Journal of Semiconductors2024，Vol.45Issue(6)：P.23-34,12.

Journal of Semiconductors2024，Vol.45Issue(6)：P.23-34,12.DOI:10.1088/1674-4926/23120057

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

Yiling Xie ¹Baochuang Wang ²Dihu Chen ¹Jianping Guo¹

作者信息

1. School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510006,China
2. School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510006,China School of Microelectronics,University of Science and Technology of China,Hefei 230000,China
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摘要

关键词

output-capacitorless low-dropout regulator/fast transient/low quiescent current/event-driven charge pump

分类

信息技术与安全科学

引用本文复制引用

Yiling Xie,Baochuang Wang,Dihu Chen,Jianping Guo..An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump[J].Journal of Semiconductors,2024,45(6):P.23-34,12.

基金项目

supported by the National Natural Science Foundation of China under Grant 62274189 （）

the Natural Science Foundation of Guangdong Province,China,under Grant 2022A1515011054 （）

the Key Area R&D Program of Guangdong Province under Grant 2022B0701180001. （）

Journal of Semiconductors

OACSTPCDEI

ISSN：1674-4926

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