基于深沟槽单次外延工艺超级结MOS器件耐压提升与优化OACSTPCD
Voltage enhancement and optimization of super junction MOS devices based on deep trench single epitaxial process
介绍了超级结MOS器件的一种主流工艺—深沟槽单次外延工艺,详细介绍了该工艺的工艺流程及特点.基于超级结MOS器件的电荷平衡原理,分析不同P柱浓度条件下器件击穿电压(Breakdown Voltage)的变化规律,揭示击穿电压(BV)偏低的原因,提出一种改善方案,最终通过实验验证该方案的可行性.
In this paper,a mainstream technology for manufacturing super junction MOS(SJMOS)devices,namely the Deep Trench Sin-gle Epitaxial Process(DTSE),is introduced.And the flow and characteristics of DTSE are described in detail.Based on the charge bal-ance principle of SJMOS,the variation of breakdown voltage(BV)under different P-pillar doping concentrations is analyzed,revealing the reasons for the low BV.A improvement solution is proposed,and its feasibility is demonstrated through the experimental verification.
田俊;付振;张泉;肖超;张文敏;王悦
北京智芯微电子科技有限公司,北京 102200||北京芯可鉴科技有限公司,北京 102200
计算机与自动化
超级结MOS电荷平衡深沟槽P柱宽度调整耐压BV
super junction MOScharge balancedeep trenchP pillar width adjustmentvoltage withstand BV
《集成电路与嵌入式系统》 2024 (006)
46-54 / 9
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