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近化学计量比的HgCdTe薄膜表面处理方法

王嘉龙 刘艳珍 杨晓坤 黄福云 杨超伟 李雄军

红外技术2024,Vol.46Issue(6):646-653,8.
红外技术2024,Vol.46Issue(6):646-653,8.

近化学计量比的HgCdTe薄膜表面处理方法

Surface Treatment Method of Near-Stoichiometric Ratio HgCdTe Film

王嘉龙 1刘艳珍 1杨晓坤 1黄福云 1杨超伟 1李雄军1

作者信息

  • 1. 昆明物理研究所,云南 昆明 650223
  • 折叠

摘要

Abstract

Surface components of HgCdTe(MCT)films were examined using x-ray photoelectron spectroscopy after etching with different solutions,including Br2:methanol(Br2:Me),Br2:HBr,and Br2:HBr:ethanediol(Br2:HBr:Eg).The surface degradation after etching by bromide-based solutions arises from the Te-rich element on the surface of HgCdTe,and the enrichment degree of Te is(Br2:HBr:Eg)<(Br2:HBr)<(Br2:Me).The wet-etch method is difficult to apply in eliminating Te-rich components to achieve a near-stoichiometric surface.In the commonly used method,oxidation is followed by corrosion.Plasma oxidation offers advantages,such as strong oxidation,stability,safety,and environmental protection.Therefore,oxygen plasma treatment has been introduced for various etchants to eliminate oxides,including hydrochloric acid,lactic acid,and ammonia.The results indicate that the use of low-concentration hydrochloric acid immersion generates a better effect without introducing any new dopants,and the defect density of the CdTe/HgCdTe interface decreases significantly after treatment.

关键词

碲镉汞/表面处理/富碲/等离子体氧化/近化学计量比

Key words

HgCdTe/surface treatment/Te rich/oxygen plasma treatment/near-stoichiometric

分类

信息技术与安全科学

引用本文复制引用

王嘉龙,刘艳珍,杨晓坤,黄福云,杨超伟,李雄军..近化学计量比的HgCdTe薄膜表面处理方法[J].红外技术,2024,46(6):646-653,8.

红外技术

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