近化学计量比的HgCdTe薄膜表面处理方法OA北大核心CSTPCD

Surface components of HgCdTe(MCT)films were examined using x-ray photoelectron spectroscopy after etching with different solutions,including Br2:methanol(Br2:Me),Br2:HBr,and Br2:HBr:ethanediol(Br2:HBr:Eg).The surface degradation after etching by bromide-based solutions arises from the Te-rich element on the surface of HgCdTe,and the enrichment degree of Te is(Br2:HBr:Eg)<(Br2:HBr)<(Br2:Me).The wet-etch method is difficult to apply in eliminating Te-rich components to achieve a near-stoichiometric surface.In the commonly used method,oxidation is followed by corrosion.Plasma oxidation offers advantages,such as strong oxidation,stability,safety,and environmental protection.Therefore,oxygen plasma treatment has been introduced for various etchants to eliminate oxides,including hydrochloric acid,lactic acid,and ammonia.The results indicate that the use of low-concentration hydrochloric acid immersion generates a better effect without introducing any new dopants,and the defect density of the CdTe/HgCdTe interface decreases significantly after treatment.