考虑驱动电压与开关时序协同调控的Si/SiC混合器件开关策略OA北大核心CSTPCD

The hybrid switch composed of Si based insulated gate bipolar transistor(IGBT)and SiC based metal oxide semiconductor field effect transistor(MOSFET)in parallel has been proved to have the high switching frequency and low switching loss characteristics of SiC MOSFET,and the large current-carrying capacity and low cost advantages of Si IGBT.However,the current research on performance improvement of Si/SiC hybrid Switch does not take efficiency and reliability into account,and there is a disadvantage of single control parameter.Based on this,the effects of control parameters such as drive voltage and switching sequence on power loss and electric stress of Si/SiC hybrid Switch under different load current are analyzed in detail.,and the switching strategy of Si/SiC hybrid switch considering coordinated control of driving voltage and switching sequence is proposed.The proposed switching strategy adopts the combination of driving voltage and switching sequence in different current intervals,which not only ensures the reliability of Si/SiC hybrid switch,but also improves their operating efficiency.The double-pulse test experimental platform and the steady-state parameter measurement experimental platform are built to verify the proposed switching strategy.The experimental results show that compared with traditional switching strategies,turn-on switching loss,turn-off switching loss and conduction loss of the Si/SiC hybrid Switch using the proposed switch strategy are reduced by 13%,21%and 32%,respectively.