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热丝化学气相沉积法制备单晶金刚石的试验研究

张川 刘栋栋 陆明 孙方宏

金刚石与磨料磨具工程2024,Vol.44Issue(3):279-285,7.
金刚石与磨料磨具工程2024,Vol.44Issue(3):279-285,7.DOI:10.13394/j.cnki.jgszz.2023.0101

热丝化学气相沉积法制备单晶金刚石的试验研究

Experimental study on synthesis of single crystal diamond by hot filament chemical vapor deposition method

张川 1刘栋栋 1陆明 1孙方宏1

作者信息

  • 1. 上海交通大学 机械与动力工程学院,上海 200240
  • 折叠

摘要

Abstract

The deposition area of the hot filament chemical vapor deposition(HFCVD)method can reach 12 inches,which has the potential to produce larger-sized single crystal diamonds.In this study,single crystal diamond with a size of 3 mm×3 mm×1 mm and(100)orientation was used as the substrate.Homoepitaxial growth was carried out using the HFCVD method with methane and hydrogen as precursors,and a small amount of nitrogen gas.The results show that under the conditions of a filament temperature of 2 200 ℃,a carbon source concentration of 4%,and a chamber pressure of 4 kPa,single crystal diamond grows at a rate of 3.41 μm/h.The surface of the diamond exhibits no defects such as polycrystals,cracks,or holes.The full width half maximum(FWHM)of the epitaxial layer's X-ray diffraction spectrum at the(400)peak is 0.11°,which is lower than that of the substrate at 0.16°,indicating that the crystal quality of the epitaxial layer is higher than that of the substrate.The introduction of nitrogen can increase the growth rate of single crystal diamond,although it reduces the crystal quality of the epitaxial layer.A higher nitrogen concentration can also shift the growth mode of single crystal diamond change to island growth.

关键词

热丝化学气相沉积法/单晶金刚石/工艺参数优化/氮气掺杂

Key words

hot filament chemical vapor deposition/single crystal diamond/optimization of deposition parameters/ni-trogen doping

分类

化学工程

引用本文复制引用

张川,刘栋栋,陆明,孙方宏..热丝化学气相沉积法制备单晶金刚石的试验研究[J].金刚石与磨料磨具工程,2024,44(3):279-285,7.

基金项目

国家自然科学基金项目"基于陶瓷中间过渡层的梯度渐变超纳米金刚石复合涂层制备新技术与应用基础研究"(项目编号:52175424). (项目编号:52175424)

金刚石与磨料磨具工程

OA北大核心CSTPCD

1006-852X

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