金刚石与磨料磨具工程2024，Vol.44Issue(3)：319-326,8.DOI:10.13394/j.cnki.jgszz.2023.0124
纳米划擦速度对单晶硅去除行为的影响
Effect of nano-scratch speed on removal behavior of single crystal silicon
摘要
Abstract
As a typical hard and brittle material,single-crystal silicon exhibits different strain rates at varying scratch-ing speeds,leading to diverse material removal behaviors.Molecular dynamics was used to study the deformation and removal processes of single-crystal silicon at different scratching speeds from the perspective of strain rate.The results show that the strain rate of the material increases from 1.25×1010 s-1 to 1.25×1011 s-1 as the scratching speed increases from 25 m/s to 250 m/s.At the same time,the scratching parameters,including scratching force,shear stress,and fric-tion coefficient,decrease while the scratching temperature increases.Additionally,the contour accuracy and roughness of the scratch surface improve with increased scratching speeds.Amorphization and phase transformation during the scratching process are the main mechanisms of nanoscale deformation in single-crystal silicon.The depth of the subsur-face damage layer decreases from 2.24 nm to 1.89 nm with the increase of shear stress,while the depth of the amorph-ous layer increases with the rise in scratching temperature.关键词
单晶硅/纳米划擦/分子动力学/划擦速度/应变率Key words
single crystal silicon/nano-scratch/molecular dynamics/scratching speed/strain rate分类
机械制造引用本文复制引用
田海兰,闫少华,孙真真,王浩昌,闫海鹏..纳米划擦速度对单晶硅去除行为的影响[J].金刚石与磨料磨具工程,2024,44(3):319-326,8.基金项目
河北省自然科学基金(E2021208004). （E2021208004）
