碳化硅晶片减薄工艺对表面损伤的影响OA北大核心CSTPCD

With the rapid development of silicon carbide(SiC)power devices and chip technology,the demand for grinding process of SiC wafers has become increasingly crucial due to the escalating requirements for physical strength,heat dissipation and size.Therefore,grinding process of SiC wafers has gradually become an important issue in manuscription processing.Due to its low fracture toughness,the SiC wafers are prone to cracking during grinding processes.It's a big challenge in achieving an efficient and high-quality grinding process for SiC wafers.Based on the process and principle analysis of SiC wafer grinding,the influence of four key parameters in the grinding process,i.e.,grinding wheel size,feed rate,grinding wheel speed and chuck table speed on wafer surface edge breakage,were studied in this paper.The process of improving the processability of wafer by annealing is presented,and the surface integrity improving process of wafer is proposed.The study reveals the control method of wafer grinding processing surface quality,offered an efficient process route for reducing surface damage and improving the surface layer quality of chips,and verified the machining effect through experiments.The relevant results have important guiding significance for the wafer grinding process of hard and brittle materials.