人工晶体学报2024，Vol.53Issue(6)：967-972,6.
碳化硅晶片减薄工艺对表面损伤的影响
Effect of SiC Wafer Grinding Process on Surface Damage
谢贵久 1张文斌 1王岩 2宋振 3张兵1
作者信息
- 1. 北京中电科电子装备有限公司,北京 100176
- 2. 天津科技大学机械工程学院,天津 300457
- 3. 北京科技大学材料学院,北京 100176
- 折叠
摘要
Abstract
With the rapid development of silicon carbide(SiC)power devices and chip technology,the demand for grinding process of SiC wafers has become increasingly crucial due to the escalating requirements for physical strength,heat dissipation and size.Therefore,grinding process of SiC wafers has gradually become an important issue in manuscription processing.Due to its low fracture toughness,the SiC wafers are prone to cracking during grinding processes.It's a big challenge in achieving an efficient and high-quality grinding process for SiC wafers.Based on the process and principle analysis of SiC wafer grinding,the influence of four key parameters in the grinding process,i.e.,grinding wheel size,feed rate,grinding wheel speed and chuck table speed on wafer surface edge breakage,were studied in this paper.The process of improving the processability of wafer by annealing is presented,and the surface integrity improving process of wafer is proposed.The study reveals the control method of wafer grinding processing surface quality,offered an efficient process route for reducing surface damage and improving the surface layer quality of chips,and verified the machining effect through experiments.The relevant results have important guiding significance for the wafer grinding process of hard and brittle materials.关键词
碳化硅晶圆/减薄工艺/退火处理/表面损伤/砂轮粒度/损伤深度Key words
silicon carbide wafer/grinding process/annealing process/surface damage/grinding wheel size/damage depth分类
信息技术与安全科学引用本文复制引用
谢贵久,张文斌,王岩,宋振,张兵..碳化硅晶片减薄工艺对表面损伤的影响[J].人工晶体学报,2024,53(6):967-972,6.
