有色金属材料与工程2024，Vol.45Issue(3)：46-54,9.DOI:10.13258/j.cnki.nmme.20230210001
MoS2单晶薄膜的制备及生长机制研究
Research on the preparation and growth mechanism of MoS2 single crystal films
摘要
Abstract
The process parameters and growth law of two-dimensional MoS2 films were studied to provide technical experience for the synthesis process of transition metal sulfide thin films.Using chemical vapor deposition method with MoO3 and S powders as precursors,a series of MoS2 thin films were prepared by adjusting the carrier gas flow rate,holding time,and MoO3 mass.The layer number and structure of MoS2 films were characterized by optical microscopy,Raman spectroscopy,photoluminescence spectroscopy,atomic force microscopy,and other test devices.The effects of process parameters on MoS2 thin films were studied,and the growing mechanism of core nucleation were explored.The results show that the optimal MoS2 films are obtained under the conditions including a carrier gas flow rate of 110 mL/min,holding time of 10 min,and MoO3 mass of 2.5 mg.There are continuous MoS2 thin films with different thicknesses on the same substrate.Monolayer MoS2 films with length of 100 μm or more can be prepared by controlling the ratio of precursors and appropriate process parameters.关键词
二维材料/MoS2薄膜/化学气相沉积/拉曼光谱Key words
two-dimensional materials/MoS2 thin films/chemical vapor deposition/Raman spectrum分类
化学化工引用本文复制引用
钟浩然,王宇裘,王丁..MoS2单晶薄膜的制备及生长机制研究[J].有色金属材料与工程,2024,45(3):46-54,9.基金项目
上海市自然科学基金面上项目(19ZR1435200) （19ZR1435200）
