集成电路与嵌入式系统2024，Vol.24Issue(7)：30-36,7.
偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究
Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices
摘要
Abstract
In order to investigate single-event transient(SET)of 22 nm FDSOI technology,we have built a FDSOI NMOS model based on Sentaurus TCAD and carried out various SET simulations in 22nm FDSOI NMOS.The sensitive region,bias voltage and tempera-ture dependence of SET in 22 nm FDSOI NMOS have been examined.The simulation results show that the sensitive regions in 22 nm FDSOI NMOS are the body region and LDD region near the body region.As the bias voltage increases,the total collected charge is in-creasing,and the width of drain transient pulse current is declining.Compared to the bias voltage,the effect of operating temperature on SET in 22 nm FDSOI NMOS is not significant.关键词
22 nm FDSOI/单粒子瞬态/亚阈值/TCADKey words
22 nm FDSOI/single-event transient/subthreshold/TCAD分类
信息技术与安全科学引用本文复制引用
黄潇枫,李臣明,王海滨,孙永姝,王亮,郭刚,汪学明..偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究[J].集成电路与嵌入式系统,2024,24(7):30-36,7.基金项目
国防科工局抗辐照应用技术创新基金重点项目(KFZC2020010401). （KFZC2020010401）
