Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantationOACSTPCD

The construction of lateral p-n junctions is very important and challenging in two-dimensional(2D)semiconductor manufacturing process.Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials.However,interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology.Constructing 2D lateral p-n homojunction is an effective strategy to address these issues.Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction.In this work,we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV.Low-energy implantation can form a shallow implantation depth,which is more suitable for modulating the electrical and optical properties of 2D materials.Hence,we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS2 and successfully realize a precise regulation for WS2 with its conductivity type transforming from n-type to bipolar or even p-type conduction.Furthermore,the universality of this method is demonstrated by extending it to other 2D semiconductors,including WSe2,SnS2 and MoS2.Based on this method,a lateral WS2 p-n homojunction is fabricated,which exhibits significant rectification characteristics.A photodetector based on p-n junction with photovoltaic effect is also prepared,and the open circuit voltage can reach to 0.39 V.This work provides an effective way for controllable doping of 2D semiconductors.