首页|期刊导航|光：科学与应用（英文版）|Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

Yufan Kang Yongfeng Pei Dong He Hang Xu Mingjun Ma Jialu Yan Changzhong Jiang Wenqing Li Xiangheng Xiao

光：科学与应用（英文版）2024，Vol.13Issue(6)：1159-1169,11.

光：科学与应用（英文版）2024，Vol.13Issue(6)：1159-1169,11.DOI:10.1038/s41377-024-01477-3

Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

Yufan Kang ¹Yongfeng Pei ¹Dong He ¹Hang Xu ¹Mingjun Ma ¹Jialu Yan ¹Changzhong Jiang ¹Wenqing Li ¹Xiangheng Xiao¹

作者信息

1. School of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,China
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摘要

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Yufan Kang,Yongfeng Pei,Dong He,Hang Xu,Mingjun Ma,Jialu Yan,Changzhong Jiang,Wenqing Li,Xiangheng Xiao..Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation[J].光：科学与应用（英文版）,2024,13(6):1159-1169,11.

基金项目

This work was financially supported by the National Natural Science Foundation of China(12025503,U23B2072,12074293,and 12275198),the Fundamental Research Funds for the Center Universities(2042024kf0001 and 2042023kf0196). （12025503,U23B2072,12074293,and 12275198）

光：科学与应用（英文版）

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ISSN：2095-5545

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