Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantationOACSTPCD
Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation
Yufan Kang;Yongfeng Pei;Dong He;Hang Xu;Mingjun Ma;Jialu Yan;Changzhong Jiang;Wenqing Li;Xiangheng Xiao
School of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,ChinaSchool of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,China
《光：科学与应用（英文版）》 2024 (6)
1159-1169,11
This work was financially supported by the National Natural Science Foundation of China(12025503,U23B2072,12074293,and 12275198),the Fundamental Research Funds for the Center Universities(2042024kf0001 and 2042023kf0196).
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