高功率密度三相全桥SiC功率模块设计与开发OA北大核心CSTPCD

In order to meet the demand for high-power-density SiC power modules in the rapidly evolving electric vehicle industry,a design and development of a 1 200 V/500 A high-power-density three-phase full-bridge SiC power module were undertaken.A power module packaging method based on multi-layer direct-bonded copper units was proposed to parallel more chips.This method leverages the mutual inductance cancellation effect to reduce parasitic inductance.Additionally,due to the doubled conductive area,the total module area was reduced.Physical fabrication and performance testing were conducted based on electromagnetic and thermodynamic simulation analyses.Simulation and experimental results indicate that,compared to traditional packaging methods,this approach reduces dimensions by 34.9%and decreases parasitic inductance by 74.8%,enhancing gate stability.Furthermore,at a direct current of 300 A,the highest junction temperature for a single phase is 158℃.