华中科技大学学报（自然科学版）2024，Vol.52Issue(7)：83-86,91,5.DOI:10.13245/j.hust.240878
高功率密度三相全桥SiC功率模块设计与开发
Design and development of high power density three phase full bridge SiC power module
摘要
Abstract
In order to meet the demand for high-power-density SiC power modules in the rapidly evolving electric vehicle industry,a design and development of a 1 200 V/500 A high-power-density three-phase full-bridge SiC power module were undertaken.A power module packaging method based on multi-layer direct-bonded copper units was proposed to parallel more chips.This method leverages the mutual inductance cancellation effect to reduce parasitic inductance.Additionally,due to the doubled conductive area,the total module area was reduced.Physical fabrication and performance testing were conducted based on electromagnetic and thermodynamic simulation analyses.Simulation and experimental results indicate that,compared to traditional packaging methods,this approach reduces dimensions by 34.9%and decreases parasitic inductance by 74.8%,enhancing gate stability.Furthermore,at a direct current of 300 A,the highest junction temperature for a single phase is 158℃.关键词
电动汽车/碳化硅芯片/功率模块/功率密度/封装Key words
electric vehicle/silicon carbide chip/power module/power density/package分类
信息技术与安全科学引用本文复制引用
回晓双,宁圃奇,李东润,康玉慧..高功率密度三相全桥SiC功率模块设计与开发[J].华中科技大学学报（自然科学版）,2024,52(7):83-86,91,5.基金项目
国家重点研发计划资助项目(2021YFB2500600) （2021YFB2500600）
中国科学院青年交叉团队基金资助项目(JCTD-2021-09) （JCTD-2021-09）
中国科学院A类战略性先导科技专项课题(XDA28040100). （XDA28040100）
