电子学报2024，Vol.52Issue(5)：1591-1600,10.DOI:10.12263/DZXB.20221027
高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究
Study on Density of States Model of High-Concentration Doped Amorphous Indium Gallium Zinc Oxide Thin-Film
摘要
Abstract
A high-concentration doped density of states model(HCD-DOS model)was established for amorphous in-dium gallium zinc oxide(a-IGZO)thin-film transistors(TFTs)with back-channel etch(BCE)technology.The effect of the key parameters of the density of states on the device performance was also investigated by numerical simulation to reveal the physical mechanism of the preparation process to repair the conductive channel in a-IGZO TFTs.Firstly,the molybde-num/copper bilayer structure with high bonding strength was used as gate/source/drain electrodes,and the bottom-gate top-contact(BG-TC)TFTs was prepared by introducing the BCE method.Secondly,the HCD-DOS model of a-IGZO TFTs suitable for BCE technology was developed.Subsequently,the key parameters of the density of states were investigated nu-merically based on the TCAD(Technology Computer Aided Design)simulator.The results demonstrated that different den-sity of states parameters had different effects on the transfer characteristic curves,electrical characteristics,and electron con-centration distribution inside the channel of the a-IGZO TFTs device.At last,the influence of SiOx passivation-layer deposi-tion and N2O plasma treatment on the internal mechanism of the device was explored based on the HCD-DOS model.It was found that N2O plasma treatment had a significant effect on the density of states distribution and channel carrier concen-tration,which in turn caused the threshold voltage to drift.关键词
非晶铟镓锌氧化物薄膜晶体管/态密度模型/钝化层沉积/等离子体处理/背沟道刻蚀Key words
amorphous indium gallium zinc oxide thin-film transistors/density of states model/passivation-layer de-position/plasma treatment/back-channel etch分类
信息技术与安全科学引用本文复制引用
蔡坤林,谢应涛,蹇欢,黄雁琳,翁嘉明..高浓度掺杂非晶铟镓锌氧化物薄膜的态密度模型研究[J].电子学报,2024,52(5):1591-1600,10.基金项目
国家自然科学基金(No.61804019) （No.61804019）
重庆市教委科学技术研究项目(No.KJZD-K202200607) （No.KJZD-K202200607）
重庆市研究生科研创新项目(No.CYS22441) National Natural Science Foundation of China(No.61804019) （No.CYS22441）
Science and Technology Re-search Program of Chongqing Municipal Education Commission(No.KJZD-K202200607) （No.KJZD-K202200607）
Chongqing Postgraduate Re-search and Innovation Project(No.CYS22441) （No.CYS22441）
