世界有色金属Issue(10)：193-195,3.
GB/T43885《碳化硅外延片》标准解读
Interpretation of GB/T 43885《Silicon carbide epitaxial wafers》
李素青 1骆红2
作者信息
- 1. 有色金属技术经济研究院有限责任公司,北京 100080
- 2. 南京国盛电子有限公司,江苏 南京 211100
- 折叠
摘要
Abstract
Silicon carbide epitaxial wafers have wide band gap,high breakdown electric field,high saturation drift rate,high thermal conductivity and other excellent electrical properties,especially suitable for the production of high power,high frequency,high temperature and radiation resistance electronic devices,in solar and wind power generation,rail transit,smart grid,electric vehicles and other fields have a wide range of applications.The formulation of this standard is of pivotal significance to standardize the technical indicators of silicon carbide epitaxial wafers,ensure that the overall research and development and industrialization level of domestic silicon carbide epitaxial wafers closely follow the international development trend,and ensure the safety of domestic supply chain关键词
碳化硅/碳化硅外延片Key words
Silicon carbide/Silicon carbide epitaxial wafers分类
管理科学引用本文复制引用
李素青,骆红..GB/T43885《碳化硅外延片》标准解读[J].世界有色金属,2024,(10):193-195,3.
