真空电子技术Issue(3)：63-75,13.DOI:10.16540/j.cnki.cn11-2485/tn.2024.03.13
碳化硅真空纳米电子器件技术分析
Technological Analysis of Silicon Carbide Based Vacuum Nanoscale Electronic Devices
任大鹏 1李兴辉 2韩攀阳 2仲子琪2
作者信息
- 1. 中国电子科技南湖研究院,浙江嘉兴 314000||上海交通大学电子信息与电气工程学院,上海 200240
- 2. 中国电子科技集团公司第十二研究所微波电真空器件国家级重点实验室,北京 100015
- 折叠
摘要
Abstract
Emerging vacuum nanoscale electronic devices combine the advantages of solid-state device integrated circuits and traditional vacuum electronic devices.However,the same process and integration platform with silicon devices limits their wider application in harsh environment.The use of wide bandgap semiconductor material silicon carbide in the preparation of vacuum nanoscale electronic devices can provide both radiation resistance and high temperature resistance,giving the device excellent comprehensive advan-tages.The problems faced in the development of silicon devices and integrated circuits are analyzed,the development history of vacuum nanoscale electronic devices is reviewed,the relative advantages of silicon carbide materials and the current research status of silicon carbide based vacuum nanoscale electronic de-vices are introduced,and the development and application prospects of the devices are analyzed.关键词
碳化硅/真空器件/纳米器件/抗温/抗辐射Key words
Silicon carbide/Vacuum devices/Nanoscale devices/Temperature resistance/Radiation resistance分类
信息技术与安全科学引用本文复制引用
任大鹏,李兴辉,韩攀阳,仲子琪..碳化硅真空纳米电子器件技术分析[J].真空电子技术,2024,(3):63-75,13.
