A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOSOACSTPCDEI
A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS
Ang Li;Haoran Yin;Minye Zhu;Yang Qu;Peng Wang;Daofa Wang;Wei Li;Liyuan Liu;Nan Qi;Ming Li;Qianli Ma;Yujun Xie;Yongliang Xiong;Yingjie Ma;Han Liu;Ye Jin;Menghan Yang;Guike Li
Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China||School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaInstitute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,ChinaKey Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
《半导体学报（英文版）》 2024 (007)
6-10 / 5
This work was supported by the National Natural Science Foundation of China(Grant Nos.61925505,92373209 and 62235017).
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