半导体学报（英文版）2024，Vol.45Issue(7)：6-10,5.DOI:10.1088/1674-4926/24050040
A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS
A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS
Ang Li 1Haoran Yin 2Minye Zhu 2Yang Qu 3Peng Wang 3Daofa Wang 1Wei Li 1Liyuan Liu 2Nan Qi 2Ming Li 1Qianli Ma 2Yujun Xie 3Yongliang Xiong 2Yingjie Ma 2Han Liu 2Ye Jin 1Menghan Yang 1Guike Li2
作者信息
- 1. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China||School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
- 2. Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China
- 3. Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
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Ang Li,Haoran Yin,Minye Zhu,Yang Qu,Peng Wang,Daofa Wang,Wei Li,Liyuan Liu,Nan Qi,Ming Li,Qianli Ma,Yujun Xie,Yongliang Xiong,Yingjie Ma,Han Liu,Ye Jin,Menghan Yang,Guike Li..A 256 Gb/s electronic-photonic monolithically integrated transceiver in 45 nm CMOS[J].半导体学报（英文版）,2024,45(7):6-10,5.基金项目
This work was supported by the National Natural Science Foundation of China(Grant Nos.61925505,92373209 and 62235017). （Grant Nos.61925505,92373209 and 62235017）
