High-precision X-ray characterization for basic materials in modern high-end integrated circuitOACSTPCDEI
High-precision X-ray characterization for basic materials in modern high-end integrated circuit
Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and function-ality in electronic devices. From its early iterations to the advanced variants of today,this field has undergone an extraordinary evolution. As the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal qualities. Consequently,conducting a range of characterization tests on the crystals has become necessary. This paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the signifi-cance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography character-ization in semiconductor analysis. Finally,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.
Weiran Zhao;Qiuqi Mo;Li Zheng;Zhongliang Li;Xiaowei Zhang;Yuehui Yu
National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China||School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,ChinaNational Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,ChinaShanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,ChinaBeijing Synchrotron Radiation Facility,Institute of High Energy Physics,Chinese Academy of Science,Beijing 100049,China
X-ray topographysynchrotron radiationsemiconductor materialscrystal defects
《半导体学报（英文版）》 2024 (007)
11-24 / 14
This work was supported by Youth Innovation Promotion Association CAS,National Natural Science Foundation of China(Grant No.11705263)and Shanghai Rising-Star Program(Grant No.21QA1410900).The authors thank Prof.Zengfeng Di and Prof.Wenjie Yu for their generous help.
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