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High-precision X-ray characterization for basic materials in modern high-end integrated circuit

Weiran Zhao Qiuqi Mo Li Zheng Zhongliang Li Xiaowei Zhang Yuehui Yu

半导体学报（英文版）2024，Vol.45Issue(7)：11-24,14.

半导体学报（英文版）2024，Vol.45Issue(7)：11-24,14.DOI:10.1088/1674-4926/24030016

High-precision X-ray characterization for basic materials in modern high-end integrated circuit

Weiran Zhao ¹Qiuqi Mo ¹Li Zheng ²Zhongliang Li ³Xiaowei Zhang ⁴Yuehui Yu²

作者信息

1. National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China||School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
2. National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
3. Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China
4. Beijing Synchrotron Radiation Facility,Institute of High Energy Physics,Chinese Academy of Science,Beijing 100049,China
折叠

摘要

关键词

X-ray topography/synchrotron radiation/semiconductor materials/crystal defects

Key words

X-ray topography/synchrotron radiation/semiconductor materials/crystal defects

引用本文复制引用

Weiran Zhao,Qiuqi Mo,Li Zheng,Zhongliang Li,Xiaowei Zhang,Yuehui Yu..High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J].半导体学报（英文版）,2024,45(7):11-24,14.

基金项目

This work was supported by Youth Innovation Promotion Association CAS,National Natural Science Foundation of China(Grant No.11705263)and Shanghai Rising-Star Program(Grant No.21QA1410900).The authors thank Prof.Zengfeng Di and Prof.Wenjie Yu for their generous help. （Grant No.11705263）

半导体学报（英文版）

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ISSN：1674-4926

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