Dual-phase coexistence enables to alleviate resistance drift in phase-change filmsOACSTPCDEI
Dual-phase coexistence enables to alleviate resistance drift in phase-change films
The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here,we modify the phase change properties of the conventional Ge2Sb2Te5 (GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus,this study reveals the quantita-tive relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization,which is of great significance for finding a promising phase change material.
Tong Wu;Chen Chen;Jinyi Zhu;Guoxiang Wang;Shixun Dai
Laboratory of Infrared Materials and Devices,The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,ChinaLaboratory of Infrared Materials and Devices,The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China||Institute of Ocean Engineering,Ningbo University,Ningbo 315211,China
phase change filmsX-ray methodsresistance driftoptical band gap
《半导体学报（英文版）》 2024 (007)
54-59 / 6
This work was financially supported by the National Natural Science Foundation of China(Grant No.62074089),the Natural Science Foundation of Ningbo City,China(Grant No.2022J072),the Youth Science and Technology Innovation Leading Talent Project of Ningbo City,China(Grant No.2023QL005)and was sponsored by the K.C.Wong Magna Fund in Ningbo University.
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