Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
Bosen Liu Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo
Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
摘要
关键词
AlGaN/GaN MIS HEMTs/gate dielectric layer/depletion-mode/gate reliability/Ion/Ioff ratioKey words
AlGaN/GaN MIS HEMTs/gate dielectric layer/depletion-mode/gate reliability/Ion/Ioff ratio引用本文复制引用
Bosen Liu,Lu Wang,Qizhi Huang,Leifeng Jiang,Zhongming Zeng,Zhipeng Wei,Baoshun Zhang,Guohao Yu,Huimin Jia,Jingyuan Zhu,Jiaan Zhou,Yu Li,Bingliang Zhang,Zhongkai Du,Bohan Guo..Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer[J].半导体学报（英文版）,2024,45(7):69-75,7.基金项目
This work was supported by the National Natural Science Foundation of China(Grant No.1237310),The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321),the National Natural Science Foundation of China(Grant No.92163204),The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1).The authors would like to thank the Nano Fabrication Facility,Platform for Characterization and Test,Vacuum Interconnected Nanotech Workstation(NANO-X),and Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences. （Grant No.1237310）
