Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layerOACSTPCDEI
Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
In this paper,we explore the electrical characteristics of high-electron-mobility transistors (HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor (MIS) structure. The high-resistance tantalum nitride (TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface,and reducing the gate leakage current of the MIS HEMT,its performance was enhanced. The HEMT exhib-ited a low gate leakage current of 2.15 × 10-7 mA/mm and a breakdown voltage of 1180 V. Furthermore,the MIS HEMT dis-played exceptional operational stability during dynamic tests,with dynamic resistance remaining only 1.39 times even under 400 V stress.
Bosen Liu;Lu Wang;Qizhi Huang;Leifeng Jiang;Zhongming Zeng;Zhipeng Wei;Baoshun Zhang;Guohao Yu;Huimin Jia;Jingyuan Zhu;Jiaan Zhou;Yu Li;Bingliang Zhang;Zhongkai Du;Bohan Guo
State Key Laboratory of High-Power Semiconductor Laser,School of Physics,Changchun University of Science and Technology,Changchun130022,China||Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,ChinaState Key Laboratory of High-Power Semiconductor Laser,School of Physics,Changchun University of Science and Technology,Changchun130022,ChinaNanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,ChinaNanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Suzhou Powerhouse Electronics Technology Co.,Ltd.,Suzhou 215123,ChinaSuzhou Powerhouse Electronics Technology Co.,Ltd.,Suzhou 215123,China
AlGaN/GaN MIS HEMTsgate dielectric layerdepletion-modegate reliabilityIon/Ioff ratio
《半导体学报（英文版）》 2024 (007)
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This work was supported by the National Natural Science Foundation of China(Grant No.1237310),The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321),the National Natural Science Foundation of China(Grant No.92163204),The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1).The authors would like to thank the Nano Fabrication Facility,Platform for Characterization and Test,Vacuum Interconnected Nanotech Workstation(NANO-X),and Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences.
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