首页|期刊导航|半导体学报（英文版）|Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi

半导体学报（英文版）2024，Vol.45Issue(7)：76-83,8.

半导体学报（英文版）2024，Vol.45Issue(7)：76-83,8.DOI:10.1088/1674-4926/23090024

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

Huifan Xiong ¹Xuesong Lu ¹Xu Gao ¹Yuchao Yan ¹Shuai Liu ²Lihui Song ¹Deren Yang ¹Xiaodong Pi¹

作者信息

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China||Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province & Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China
2. Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province & Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China
折叠

摘要

关键词

4H-SiC/deep level transient spectroscopy (DLTS)/photoluminescence (PL)/defects

Key words

4H-SiC/deep level transient spectroscopy (DLTS)/photoluminescence (PL)/defects

引用本文复制引用

Huifan Xiong,Xuesong Lu,Xu Gao,Yuchao Yan,Shuai Liu,Lihui Song,Deren Yang,Xiaodong Pi..Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing[J].半导体学报（英文版）,2024,45(7):76-83,8.

基金项目

The work is supported by the Open Fund(2022E10015)of the Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semicon-ductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center. （2022E10015）

半导体学报（英文版）

OACSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航