半导体学报（英文版）2024，Vol.45Issue(7)：84-91,8.DOI:10.1088/1674-4926/24010036
Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials
Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials
Xiaoshan Du 1Lena Du 2Zhongchang Wang 3Cong Wang 4Bing Chen 5Qian Liu 6Shu Wang 7Qiaoxuan Zhang 8Shengyao Chen 6Fengyou Yang 7Zhenzhou Liu 7Zhengwei Fan 7Lijun Ma 7Lei Wang9
作者信息
- 1. College of Electronic and Information Engineering,Shandong University of Science and Technology,Qingdao 266590,China||National Center for Nanoscience and Technology & University of Chinese Academy of Sciences,Beijing 100190,China
- 2. Department of Physics,Capital Normal University,Beijing 100048,China
- 3. Department of Advanced Materials and Computing,International Iberian Nanotechnology Laboratory (INL),4715-330 Braga,Portugal
- 4. College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China
- 5. College of Electronic and Information Engineering,Shandong University of Science and Technology,Qingdao 266590,China
- 6. National Center for Nanoscience and Technology & University of Chinese Academy of Sciences,Beijing 100190,China||The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Photonics,TEDA Institute of Applied Physics and School of Physics,Nankai University,Tianjin 300457,China
- 7. National Center for Nanoscience and Technology & University of Chinese Academy of Sciences,Beijing 100190,China
- 8. Hebei University of Water Resources and Electric Engineering Electrical Automation Department,Cangzhou 061001,China
- 9. College of Mathematics and Physics,Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory,Qingdao University of Science and Technology,Qingdao 266061,China
- 折叠
摘要
关键词
2D-material memristor/laser doping/laser direct writing/memristive mechanismKey words
2D-material memristor/laser doping/laser direct writing/memristive mechanism引用本文复制引用
Xiaoshan Du,Lena Du,Zhongchang Wang,Cong Wang,Bing Chen,Qian Liu,Shu Wang,Qiaoxuan Zhang,Shengyao Chen,Fengyou Yang,Zhenzhou Liu,Zhengwei Fan,Lijun Ma,Lei Wang..Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials[J].半导体学报（英文版）,2024,45(7):84-91,8.基金项目
This work was supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011),the National Key Research and Development Program of China(No.2016YFA0200403),Eu-FP7 Project(No.247644),CAS Strategy Pilot Program(No.XDA 09020300),Fundamental Research Funds for the Central Universities(No.buctrc202122),the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401),and the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001).The FEA software was supported by assistant professor Lirong Qian,School of Integrated Circuit Science and Engineering,Tianjin University of Technology.This work was funded by the Ph.D Foundation of Hebei University of Water Resources and Electric Engineering(No.SYBJ2202).Funded by Science and Technology Project of Hebei Education Department(No.BJK2022027). （Nos.51971070,10974037,and 62205011）
