半导体学报（英文版）2024，Vol.45Issue(8)：5-19,15.DOI:10.1088/1674-4926/24010029
Review of the SiC LDMOS power device
Review of the SiC LDMOS power device
Ziwei Hu 1Yufeng Guo 2Jiafei Yao 1Ang Li 1Qi Sun 1Man Li 2Kemeng Yang 2Jun Zhang 2Jing Chen 2Maolin Zhang2
作者信息
- 1. College of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts and Telecommuni-cations,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China||Nantong Institute of Nanjing University of Posts and Telecommunications,Nantong 226000,China
- 2. College of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts and Telecommuni-cations,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China
- 折叠
摘要
关键词
SiC/LDMOS/specific on-resistance/breakdown voltageKey words
SiC/LDMOS/specific on-resistance/breakdown voltage引用本文复制引用
Ziwei Hu,Yufeng Guo,Jiafei Yao,Ang Li,Qi Sun,Man Li,Kemeng Yang,Jun Zhang,Jing Chen,Maolin Zhang..Review of the SiC LDMOS power device[J].半导体学报（英文版）,2024,45(8):5-19,15.基金项目
This work is supported by the National Natural Science Foundation of China(Grant No.62074080),the Natural Sci-ence Foundation of Jiangsu Province(Grant Nos.BK20211104 and BK20201206),and the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126). （Grant No.62074080）
