Review of the SiC LDMOS power deviceOACSTPCDEI
Review of the SiC LDMOS power device
Silicon carbide(SiC),as a third-generation semiconductor material,possesses exceptional material properties that sig-nificantly enhance the performance of power devices.The SiC lateral double-diffused metal-oxide-semiconductor(LDMOS)power devices have undergone continuous optimization,resulting in an increase in breakdown voltage(BV)and ultra-low spe-cific on-resistance(Ron,sp).This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices,including the trench-gate technology,reduced surface field(RESURF)technology,doping technology,junction termination techniques and so on.The paper is aimed at enhancing the understanding of the operational mechanisms and pro-viding guidelines for the further development of SiC LDMOS power devices.
Ziwei Hu;Yufeng Guo;Jiafei Yao;Ang Li;Qi Sun;Man Li;Kemeng Yang;Jun Zhang;Jing Chen;Maolin Zhang
College of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts and Telecommuni-cations,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China||Nantong Institute of Nanjing University of Posts and Telecommunications,Nantong 226000,ChinaCollege of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts and Telecommuni-cations,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China
SiCLDMOSspecific on-resistancebreakdown voltage
《半导体学报（英文版）》 2024 (008)
5-19 / 15
This work is supported by the National Natural Science Foundation of China(Grant No.62074080),the Natural Sci-ence Foundation of Jiangsu Province(Grant Nos.BK20211104 and BK20201206),and the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126).
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