首页|期刊导航|半导体学报（英文版）|Embedded high-quality ternary GaAs1-xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy

Embedded high-quality ternary GaAs1-xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy

Xiyu Hou Lianjun Wen Fengyue He Ran Zhuo Lei Liu Hailong Wang Qing Zhong Dong Pan Jianhua Zhao

半导体学报（英文版）2024，Vol.45Issue(8)：20-27,8.

半导体学报（英文版）2024，Vol.45Issue(8)：20-27,8.DOI:10.1088/1674-4926/24030038

Embedded high-quality ternary GaAs1-xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy

Xiyu Hou ¹Lianjun Wen ²Fengyue He ¹Ran Zhuo ²Lei Liu ²Hailong Wang ¹Qing Zhong ²Dong Pan ¹Jianhua Zhao¹

作者信息

1. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China
2. State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
折叠

摘要

关键词

semiconductor/quantum dot/nanowire/GaAs1-xSbx/molecular-beam epitaxy

Key words

semiconductor/quantum dot/nanowire/GaAs1-xSbx/molecular-beam epitaxy

引用本文复制引用

Xiyu Hou,Lianjun Wen,Fengyue He,Ran Zhuo,Lei Liu,Hailong Wang,Qing Zhong,Dong Pan,Jianhua Zhao..Embedded high-quality ternary GaAs1-xSbx quantum dots in GaAs nanowires by molecular-beam epitaxy[J].半导体学报（英文版）,2024,45(8):20-27,8.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(Grant No.12374459)and the Strate-gic Priority Research Program of Chinese Academy of Sci-ences(Grant No.XDB0460000).D.P.acknowledges the sup-port from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043). （Grant No.12374459）

半导体学报（英文版）

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