Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanismOACSTPCDEI

作者：Fedor I.Manyakhin;Dmitry O.Varlamov;Vladimir P.Krylov;Lyudmila O.Morketsova;Arkady A.Skvortsov;Vladimir K.Nikolaev

作者单位：Dinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,RussiaDinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,RussiaBiomedical and Electronic Means and Technologies,Vladimir State University,RussiaComputer-Aided Design and Engineering,National University of Science and Technology "MISiS",RussiaDinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,RussiaDinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,Russia

中文关键词：light-emitting diodes with quantum wellsvoltage-current relationnonideality factorrecombination mechanismSah-Noyce-Shockley model

英文关键词：light-emitting diodes with quantum wellsvoltage-current relationnonideality factorrecombination mechanismSah-Noyce-Shockley model

刊名：《半导体学报（英文版）》 2024 (8)

页码/页数：28-37,10

基金：The work was conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009).

DOI：10.1088/1674-4926/23120044