Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanismOACSTPCDEI
Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanism
Herein,a physical and mathematical model of the voltage-current characteristics of a p-n heterostructure with quan-tum wells(QWs)is prepared using the Sah-Noyce-Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage-current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parame-ters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determin-ing the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.
Fedor I.Manyakhin;Dmitry O.Varlamov;Vladimir P.Krylov;Lyudmila O.Morketsova;Arkady A.Skvortsov;Vladimir K.Nikolaev
Dinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,RussiaBiomedical and Electronic Means and Technologies,Vladimir State University,RussiaComputer-Aided Design and Engineering,National University of Science and Technology "MISiS",Russia
light-emitting diodes with quantum wellsvoltage-current relationnonideality factorrecombination mechanismSah-Noyce-Shockley model
《半导体学报（英文版）》 2024 (008)
28-37 / 10
The work was conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009).
评论