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Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanism

Fedor I.Manyakhin Dmitry O.Varlamov Vladimir P.Krylov Lyudmila O.Morketsova Arkady A.Skvortsov Vladimir K.Nikolaev

半导体学报（英文版）2024，Vol.45Issue(8)：28-37,10.

半导体学报（英文版）2024，Vol.45Issue(8)：28-37,10.DOI:10.1088/1674-4926/23120044

Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanism

Fedor I.Manyakhin ¹Dmitry O.Varlamov ¹Vladimir P.Krylov ²Lyudmila O.Morketsova ³Arkady A.Skvortsov ¹Vladimir K.Nikolaev¹

作者信息

1. Dinamics,Strength of Machines and Resisance of Materials,Moscow Polytechnic University,Russia
2. Biomedical and Electronic Means and Technologies,Vladimir State University,Russia
3. Computer-Aided Design and Engineering,National University of Science and Technology "MISiS",Russia
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摘要

关键词

light-emitting diodes with quantum wells/voltage-current relation/nonideality factor/recombination mechanism/Sah-Noyce-Shockley model

Key words

light-emitting diodes with quantum wells/voltage-current relation/nonideality factor/recombination mechanism/Sah-Noyce-Shockley model

引用本文复制引用

Fedor I.Manyakhin,Dmitry O.Varlamov,Vladimir P.Krylov,Lyudmila O.Morketsova,Arkady A.Skvortsov,Vladimir K.Nikolaev..Physico-mathematical model of the voltage-current characteristics of light-emitting diodes with quantum wells based on the Sah-Noyce-Shockley recombination mechanism[J].半导体学报（英文版）,2024,45(8):28-37,10.

基金项目

The work was conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009). （Project No.FZRR-2023-0009）

半导体学报（英文版）

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ISSN：1674-4926

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