Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealingOACSTPCDEI
Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing
Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain suf-ficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were character-ized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concen-tration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equa-tion and the ionized-acceptor-density[NA-](cm-3)dependent ionization energy of Mg acceptor was determined as EAMg=184-2.66×10-5×[NA-]1/3 meV.
Siyi Huang;Masao Ikeda;Feng Zhang;Minglong Zhang;Jianjun Zhu;Shuming Zhang;Jianping Liu
School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSuzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
p-GaNhole concentrationelectrical propertiesannealingionization energy
《半导体学报（英文版）》 2024 (008)
75-82 / 8
This work was supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493),the National Key Research and Development Program of China(2022YFB2802801),the Key Research and Development Program of Jiangsu Province(BE2021008-1),the Suzhou Key Laboratory of New-type Laser Display Technol-ogy(SZS2022007),the Natural Science Foundation of Jiangsu Province(BK20232042).We are thankful for the technical support from Nano Fabri-cation Facility,Platform for Characterization & Test,and Nano-X of SINANO,CAS.
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