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Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Siyi Huang Masao Ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu

半导体学报（英文版）2024，Vol.45Issue(8)：75-82,8.

半导体学报（英文版）2024，Vol.45Issue(8)：75-82,8.DOI:10.1088/1674-4926/24010017

Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Siyi Huang ¹Masao Ikeda ²Feng Zhang ²Minglong Zhang ¹Jianjun Zhu ²Shuming Zhang ¹Jianping Liu¹

作者信息

1. School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
2. Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
折叠

摘要

关键词

p-GaN/hole concentration/electrical properties/annealing/ionization energy

Key words

p-GaN/hole concentration/electrical properties/annealing/ionization energy

引用本文复制引用

Siyi Huang,Masao Ikeda,Feng Zhang,Minglong Zhang,Jianjun Zhu,Shuming Zhang,Jianping Liu..Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing[J].半导体学报（英文版）,2024,45(8):75-82,8.

基金项目

This work was supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493),the National Key Research and Development Program of China(2022YFB2802801),the Key Research and Development Program of Jiangsu Province(BE2021008-1),the Suzhou Key Laboratory of New-type Laser Display Technol-ogy(SZS2022007),the Natural Science Foundation of Jiangsu Province(BK20232042).We are thankful for the technical support from Nano Fabri-cation Facility,Platform for Characterization & Test,and Nano-X of SINANO,CAS. （62150710548,61834008,U21A20493）

半导体学报（英文版）

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