Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealingOACSTPCDEI
Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing
Siyi Huang;Masao Ikeda;Feng Zhang;Minglong Zhang;Jianjun Zhu;Shuming Zhang;Jianping Liu
School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSuzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSuzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSchool of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSuzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSchool of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,ChinaSchool of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China||Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China||Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China
p-GaNhole concentrationelectrical propertiesannealingionization energy
p-GaNhole concentrationelectrical propertiesannealingionization energy
《半导体学报（英文版）》 2024 (8)
75-82,8
This work was supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493),the National Key Research and Development Program of China(2022YFB2802801),the Key Research and Development Program of Jiangsu Province(BE2021008-1),the Suzhou Key Laboratory of New-type Laser Display Technol-ogy(SZS2022007),the Natural Science Foundation of Jiangsu Province(BK20232042).We are thankful for the technical support from Nano Fabri-cation Facility,Platform for Characterization & Test,and Nano-X of SINANO,CAS.
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