大连理工大学学报2024，Vol.64Issue(4)：412-417,6.DOI:10.7511/dllgxb202404011
AlGaN/GaN HEMT小信号放大电路设计及放大增益预测
Small signal amplification circuit design and amplification gain prediction of AlGaN/GaN HEMT
摘要
Abstract
Technology computer aided design(TCAD)is used to simulate AlGaN/GaN high electron mobility transistor(HEMT)devices,and a low-frequency small signal amplification circuit for AlGaN/GaN HEMT devices is designed using Multisim.Due to the wide bandgap and high carrier mobility of GaN materials,HEMT devices can replace Si-based MOSFET in space science applications.The simulation results of TCAD are modified by comparing with test results.The amplifying properties of the proposed amplification circuit are verified by the results of Multisim simulation and the test results of the constructed AlGaN/GaN HEMT cascode amplification circuit.Based on this,TCAD is used to simulate the device characteristics with changing structural parameters and a cascode amplification circuit is designed by AlGaN/GaN HEMT with improved structural parameters.The simulation results show that the voltage amplification capability of the amplification circuit can reach 6 200 times at low frequencies and room temperature.关键词
AlGaN/GaN HEMT/TCAD仿真/放大增益/小信号模型Key words
AlGaN/GaN HEMT/TCAD simulation/amplification gain/small signal model分类
信息技术与安全科学引用本文复制引用
叶宇帆,张贺秋,夏晓川,郭文平,黄慧诗,梁晓华,梁红伟..AlGaN/GaN HEMT小信号放大电路设计及放大增益预测[J].大连理工大学学报,2024,64(4):412-417,6.基金项目
国家自然科学基金资助项目(11975257,12075045,11875097,62074146). （11975257,12075045,11875097,62074146）
