发光学报2024，Vol.45Issue(6)：894-904,11.DOI:10.37188/CJL.20240080
4H-SiC衬底上生长参数对AlGaN基深紫外多量子阱受激辐射特性的影响
Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates
摘要
Abstract
The SiC substrate is a good candidate for preparing high-performance AlGaN-based deep ultraviolet(DUV)lasers.The DUV AlGaN/AlN multiple quantum wells(MQWs)structures were grown on 4H-SiC substrates by metal-organic chemical vapor deposition(MOCVD).The effects of MQWs growth parameters on the spontaneous and stimulated emission characteristics of the DUV laser structure were systematically studied.After the comprehen-sive analysis of the surface morphology and emission properties of MQWs,it was found that with the increase in NH3 flow rate and growth temperature,the surface roughness of MQWs decreased and the internal quantum efficiency increased to 74.1%.At room temperature,the lasing wavelength,threshold optical power density and linewidth were 248.8 nm,1.03 MW/cm2 and 1.82 nm,respectively.The high NH3 flow rate and growth temperature suppress the incorporation of carbon impurities in the active region,leading to an increase in carrier radiative recombination efficiency and material gain.Simultaneously,the reduced growth rate improves the surface morphology of the MQWs structure and reduces interfacial scattering losses.Furthermore,smooth and steep facets were prepared by combining dry etching and wet etching processes,which reduced the mirror loss of the laser.The threshold optical power density and linewidth were decreased to 889 kW/cm2 and 1.39 nm,respectively.关键词
AlGaN/SiC/光泵浦激光器/Ⅴ/Ⅲ比/生长温度Key words
aluminum gallium nitride/silicon carbide/optically pumped laser/Ⅴ/Ⅲ ratio/growth temperature分类
数理科学引用本文复制引用
张睿洁,郭亚楠,吴涵,刘志彬,闫建昌,李晋闽,王军喜..4H-SiC衬底上生长参数对AlGaN基深紫外多量子阱受激辐射特性的影响[J].发光学报,2024,45(6):894-904,11.基金项目
国家重点研发计划(2022YFB3605104) （2022YFB3605104）
国家自然科学基金(62274163,62022080,62135013,62234001,62250071) （62274163,62022080,62135013,62234001,62250071）
北京市科技新星计划(20230484466) （20230484466）
中国科学院青年创新促进会(2022000028,2023123)Supported by National Key R&D Program of China(2022YFB3605104) （2022000028,2023123）
National Natural Science Foundation of China(62274163,62022080,62135013,62234001,62250071) （62274163,62022080,62135013,62234001,62250071）
Beijing Nova Program(20230484466) （20230484466）
Youth Innovation Promotion Association,CAS(2022000028,2023123) （2022000028,2023123）
