A位取代和缺陷钝化实现钙钛矿薄膜的低阈值红光放大自发辐射OA北大核心CSTPCD
Red Low-threshold Amplified Spontaneous Emission of Perovskite Films Achieved by A-site Substitution and Defect Passivation
作为发红光的光学增益介质,CsPbI2Br钙钛矿材料具有良好的热稳定性和合适的光学带隙,引起了研究者的广泛关注.然而,溶液法制备的CsPbI2Br薄膜在高湿度环境下易发生相变,同时薄膜存在大量缺陷,阻碍了其性能提升.鉴于此,采用部分FA+(CH4N2+)进行A位取代以提高钙钛矿薄膜的相稳定性,然后利用聚甲基丙烯酸甲酯(PMMA)对钙钛矿薄膜进行表面钝化.得益于FA+阳离子带来的薄膜形貌的改善和PMMA良好缺陷钝化效果,实现了Cs0.7FA0.3PbI2Br钙钛矿薄膜的低阈值红光放大自发辐射(ASE),其发射波长为689 nm,纳秒激光激发下的阈值为15 μJ/cm2.同时,该薄膜具有良好的疏水性和光稳定性,在大气湿度环境下(RH为(40±10)%),采用3 000 μJ/cm2 脉冲激光持续照射120 min,其ASE强度仍能维持其初始值的93%.这项工作为实现低阈值高稳定的红光ASE和激光提供了参考.
Lead halide perovskite has shown great potential as a new generation of optoelectronic materials due to its adjustable optical band gap,high luminous color purity,high carrier mobility,and solution-processibility.Cur-rently,amplified spontaneous emission(ASE)and laser have been realized in the blue,green,red,and even infra-red ranges for perovskite material.As a red light-emitting optical gain medium,CsPbI2Br perovskite material has good thermal stability and a suitable optical band gap and has attracted extensive attention from researchers.Howev-er,CsPbI2Br films prepared by the solution method are prone to phase transition in high-humidity environments,and there are many defects in the films,which hinder their further development.To improve the phase stability of CsPbI2Br perovskite films,the A-site is partially substituted by FA+(CH4N2+)in this work.The tolerance factor of the perovskite structure is increased after FA+substitution,which can effectively improve the phase stability of the perovskite films.Meanwhile,the morphology and crystallinity of the perovskite films are improved.To reduce the non-radiative recombination caused by the surface defects,polymethyl methacrylate(PMMA)is used to passivate the surface of the perovskite films.The C=O bond in PMMA can effectively bind to the undercoordinated Pb2+on the surface of perovskite,resulting in a good defect passivation effect and effective inhibition of non-radiative recombina-tion.Thanks to the improvement of the film morphology caused by FA+cation and the PMMA passivation,a low-thresh-old,15 μJ/cm2 under nanosecond laser excitation is achieved for the red ASE of the Cs0.7FA0.3PbI2Br perovskite film.At the same time,the film has good hydrophobicity and photostability.Under the air humidity environment(RH(40±10)%),the ASE intensity remains at 93%of its initial value after a pulsed laser irradiation of 3 000 μJ/cm2 for 120 min.This work provides a reference for realizing low-threshold and high-stability red ASE and laser.
王亮;严梦彤;李妍;吕梅;陆红波;朱俊
合肥工业大学 仪器科学与光电工程学院,安徽省半导体检测技术与仪器工程研究中心,测量理论与精密仪器安徽省重点实验室,安徽 合肥 230009合肥工业大学 化学与化工学院,安徽 合肥 230009合肥工业大学 仪器科学与光电工程学院,安徽省半导体检测技术与仪器工程研究中心,测量理论与精密仪器安徽省重点实验室,安徽 合肥 230009||合肥工业大学 化学与化工学院,安徽 合肥 230009
物理学
钙钛矿放大自发辐射阳离子取代缺陷钝化
perovskiteamplified spontaneous emissioncationic substitutiondefect passivation
《发光学报》 2024 (007)
1068-1076 / 9
国家自然科学基金(52302237) Supported by National Natural Science Foundation of China(52302237)
评论