1.55μm高功率单横模半导体激光器的研制OA北大核心CSTPCD

1.55 μm high power laser diodes are widely used in long-distance optical communication networks,un-manned driving,and other fields.The higher output power of the laser can effectively increase the transmission dis-tance and improve the signal-to-noise ratio of the system.As the rapid development of photonic integration and co-packaged optics,high optical and electrical integration density requires lasers to have low power consumption perfor-mance.By optimizing the p-type profile and epi-growth of the laser epi-wafer,the series resistance of the lasers at room temperature was reduced from 3.2 Ω to 2.2 Ω,and the electrical power consumption was decreased from 510 mW to 430 mW,at a current of 300 mA.The resistance of the laser is better than the device prepared by the for-eign company epi-wafer with the same structure.The taper waveguide was further adopted to increase the gain vol-ume of the lasers.The results show that the taper structure increased the laser output power by more than 17%,while the electrical power of the device did not increase significantly.The highest photoelectric conversion efficiency of the device at room temperature and low current is close to 50%,which is comparable to the results reported in related studies.The far field results show that the lateral divergence angle of the laser is effectively reduced,and the beam quality of the device does not change significantly.The experimental results provide a research basis for low power consumption high-power semiconductor lasers for optoelectronic integrated applications.