基于InSe/MoTe2异质结构的超灵敏宽光谱光电探测器OA北大核心CSTPCD
Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe2 heterostructure
基于光栅效应的二维材料垂直结构可实现高灵敏度和宽光谱光探测器.本文报告了一种基于硒化铟(InSe)/二碲化钼(MoTe2)垂直异质结构的高灵敏度光电探测器,该探测器在 365～965 nm 波长范围内具有出色的宽光谱探测能力.顶层的InSe用作调节沟道电流的光栅层,MoTe2 则用作传输层.通过结合两种材料的优势,该光电探测器的响应时间为 21.6 ms,比探测率在365 nm光照下可以达到1.05×1013 Jones,在965 nm光照下也可达到109 Jones数量级.外量子效率可达 1.03×105%,显示出强大的光电转换能力.
The photogating effect based on the vertical structure of a two-dimensional material allows high-sensi-tivity and broad-spectrum photodetector.A high-sensitivity photodetector based on the vertical heterostructure of indium selenide(InSe)/molybdenum ditelluride(MoTe2)is reported,which exhibits excellent broad-spectrum de-tection capability from 365 to 965 nm.The top layer of InSe was used as the grating layer to regulate the channel current,and MoTe2 was used as the transmission layer.By combining the advantages of the two materials,the photodetector has a fast response time of 21.6 ms and achieves a maximum detectivity of 1.05×1013 Jones under 365 nm laser irradiation.Under the illumination of 965 nm,the detectivity still achieves the order of 109 Jones.In addition,the InSe/MoTe2 heterostructure exhibits an external quantum efficiency of 1.03×105%,demonstrating strong photoelectric conversion capability.
邢艳辉;吕伟明;曾中明;贺雯馨;韩梓硕;关宝璐;马海鑫;马晓辉;韩军;时文华;张宝顺
北京工业大学 微电子学院 光电子技术教育部重点实验室,北京 100124中国科学院苏州纳米技术与纳米仿生研究所 纳米加工平台,江苏 苏州 215123北京工业大学 微电子学院 光电子技术教育部重点实验室,北京 100124||中国科学院苏州纳米技术与纳米仿生研究所 纳米加工平台,江苏 苏州 215123长春理工大学 高功率半导体激光国家重点实验室,吉林 长春 130022
电子信息工程
二维材料宽带光电探测器光栅效应超灵敏
two-dimensional materialbroadband photodetectorsphotogating effectultrasensitive
《红外与毫米波学报》 2024 (003)
316-323 / 8
Supported by the National Natural Science Foundation of China(60908012,61575008,61775007,61874145,62074011,62134008);National Key Research and Development Program of China(2018YFA0209000,2021YFC2203400,2021YFA1200804);the Beijing Natural Science Foun-dation(4172011,4202010)and Beijing Nova Program(Z201100006820096).
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