红外与毫米波学报2024，Vol.43Issue(3)：331-335,5.DOI:10.11972/j.issn.1001-9014.2024.03.006
电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT
InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz
摘要
Abstract
In this letter,an In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT>400 GHz was designed and fabri-cated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50 μm.The maximum drain current IDS.max is 957 mA/mm,and the maximum transconductance gm.max is 1 265 mS/mm.The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz,even at a relatively small value of VDS=0.7 V.The re-ported device can be applied to terahertz monolithic integrated amplifiers and other circuits.关键词
铟磷高电子迁移率晶体管(InP HEMTs)/InGaAs/InAlAs/电流增益截止频率(fT)/最大振荡频率(fmax)/栅槽Key words
InP HEMTs/InGaAs/InAlAs/current gain cutoff frequency(fT)/maximum oscillation frequency(fmax)/gate recess分类
信息技术与安全科学引用本文复制引用
封瑞泽,曹书睿,冯识谕,周福贵,刘同,苏永波,金智..电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMT[J].红外与毫米波学报,2024,43(3):331-335,5.基金项目
Supported by The National Natural Science Foundation of China(61434006) （61434006）
