电流增益截止频率为441 GHz的InGaAs/InAlAs InP HEMTOA北大核心CSTPCD
InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz
本文设计并制作了fT>400 GHz的In0.53Ga0.47As/In0.52Al0.48As 铟磷高电子迁移率晶体管(InP HEMT).采用窄栅槽技术优化了寄生电阻.器件栅长为54.4 nm,栅宽为2×50 μm.最大漏极电流IDS.max为957 mA/mm,最大跨导gm.max为1 265 mS/mm.即使在相对较小的VDS=0.7 V下,电流增益截止频率fT达到了441 GHz,最大振荡频率fmax达到了299 GHz.该器件可应用于太赫兹单片集成放大器和其他电路中.
In this letter,an In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT>400 GHz was designed and fabri-cated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50 μm.The maximum drain current IDS.max is 957 mA/mm,and the maximum transconductance gm.max is 1 265 mS/mm.The current gain cutoff frequency fT is as high as 441 GHz and the maximum oscillation frequency fmax reaches 299 GHz,even at a relatively small value of VDS=0.7 V.The re-ported device can be applied to terahertz monolithic integrated amplifiers and other circuits.
封瑞泽;曹书睿;冯识谕;周福贵;刘同;苏永波;金智
中国科学院微电子研究所,高频高压器件与集成电路研究中心,北京 100029||中国科学院大学集成电路学院,北京 100049中国科学院微电子研究所,高频高压器件与集成电路研究中心,北京 100029
电子信息工程
铟磷高电子迁移率晶体管(InP HEMTs)InGaAs/InAlAs电流增益截止频率(fT)最大振荡频率(fmax)栅槽
InP HEMTsInGaAs/InAlAscurrent gain cutoff frequency(fT)maximum oscillation frequency(fmax)gate recess
《红外与毫米波学报》 2024 (003)
331-335 / 5
Supported by The National Natural Science Foundation of China(61434006)
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