使用飞行时间二次离子质谱法判定痕量氧元素的测试方法OA
A testing method for determining trace oxygen elements using time of flight secondary ion mass spectrometry
采用飞行时间二次离子质谱法对CaF2晶体、YF3薄膜和Au薄膜中的痕量氧元素进行测试.结果表明:通过改变分析离子源光阑大小来改变离子束流,进而改变作用在试样表面的单位面积离子剂量,当离子束流增大时,CaF2晶体与YF3薄膜的氟离子、氧离子产额均增加,表明CaF2晶体与YF3薄膜中存在氧元素,测试结果与CaF2的紫外光谱测试结果和YF3薄膜的红外光谱测试结果相吻合;当离子束流增大时,金离子产额增加,而氧离子产额无明显变化,说明检测到的氧元素来自试验环境中的残余气体,Au膜中不存在氧元素.
Trace oxygen elements in CaF2 crystal,YF3 thin films and Au thin films were tested using time of flight secondary ion mass spectrometry.The results show that by changing the size of the analytical ion source aperture to change the ion beam current,the unit area ion dose acting on the sample surface was changed.As the ion beam current increased,the fluoride and oxygen ion yields of CaF2 crystal and YF3 film both increased,indicating the presence of oxygen in CaF2 crystal and YF3 film.The test results were consistent with the UV spectrum test results of CaF2 and the infrared spectrum test results of YF3 film.When the ion beam current increased,the Au ion yield increased,while the oxygen ion yield showed no significant change,indicating that the detected oxygen element came from residual gas in the experimental environment,and there was no oxygen element present in the Au film.
冯殿福;崔云;陶春先;杨峰;侯瑶
上海理工大学 光电信息与计算机工程学院,上海 200093中国科学院上海光学精密机械研究所薄膜光学实验室,上海 201800中国科学院 理化技术研究所功能晶体与激光技术重点实验室,北京 100190
机械工程
飞行时间二次离子质谱痕量元素残余气体离子束流
time of flight secondary ion mass spectrometrytrace elementresidual gasion beam current
《理化检验-物理分册》 2024 (007)
31-34 / 4
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