量子电子学报2024，Vol.41Issue(4)：671-678,8.DOI:10.3969/j.issn.1007-5461.2024.04.011
纤锌矿结构砷化镓纳米线中的深能级缺陷研究
Investigation of deep-level defects in wurtzite GaAs nanowire
摘要
Abstract
Deep-level defects are the main cause of persistent photoconductivity(PPC)effect in wurtzite gallium arsenide nanowires(WZ GaAs NWs).The photoconductivity attenuation curve of WZ GaAs NWs are analyzed using the Gauss distribution based defect composite dynamics equation,and an average carrier capture barrier of 60.2 meV is obtained.By analyzing the transient behavior of photoconductivity under illumination,a defect photoionization model is proposed to extract the characteristics of specific defect energy levels.Through fitting the photoionization spectrum of WZ GaAs NWs,a photoionization energy of 0.69 eV is obtained.The large energy difference between the photoionization energy and the thermal capture energy implies that there is a strong coupling between the defect and the lattice for WZ GaAs NWs,which is similar to the behavior of EL2 center in zinc-blende GaAs.关键词
光电子学/光电导/纤锌矿结构砷化镓/深能级缺陷/分子束外延Key words
optoelectronics/photoconductivity/wurtzite GaAs/deep-level defects/molecular beam epitaxy分类
数理科学引用本文复制引用
乔旭冕,李新化,谷毛毛,龚书磊,弓紫燕,吴超可,吴超,赵雷鸣..纤锌矿结构砷化镓纳米线中的深能级缺陷研究[J].量子电子学报,2024,41(4):671-678,8.基金项目
安徽省首批揭榜性质课题(2021e03020007),安徽省重点研究与开发计划项目(202104a05020048) （2021e03020007）
