| 注册
首页|期刊导航|铜业工程|碲化铋基热电器件的界面研究进展

碲化铋基热电器件的界面研究进展

武云笑 夏凯阳 胡惠平 张宇 付晨光 朱铁军

铜业工程Issue(3):31-39,9.
铜业工程Issue(3):31-39,9.DOI:10.3969/j.issn.1009-3842.2024.03.002

碲化铋基热电器件的界面研究进展

Research Progress on Interface of Bismuth Telluride-Based Thermoelectric De-vices

武云笑 1夏凯阳 2胡惠平 2张宇 2付晨光 1朱铁军3

作者信息

  • 1. 浙江大学材料科学与工程学院,浙江 杭州 310058
  • 2. 浙江大学温州研究院,浙江 温州 325035
  • 3. 浙江大学材料科学与工程学院,浙江 杭州 310058||浙江大学温州研究院,浙江 温州 325035
  • 折叠

摘要

Abstract

Thermoelectric conversion technology can realize direct inter-conversion between electricity and thermal energy,holding sig-nificant application value in fields such as aerospace,new energy,and electronic communications.Bismuth telluride material is one of the earliest semiconductor thermoelectric materials discovered,and its excellent thermoelectric properties near room temperature make bismuth telluride-based thermoelectric devices the only thermoelectric devices that have been successfully commercialized so far.In re-cent years,the application of thermoelectric cooler has attracted much attention as the demand for new refrigeration technologies in the 5G optical communications and electronic chip industries continues to grow.In addition,bismuth telluride-based thermoelectric genera-tor has great application prospects in the field of low-temperature waste heat recovery.However,there are still some challenges in the development of bismuth telluride-based thermoelectric devices,and the interface problems of the devices seriously restrict their indus-trial application.Especially in the preparation of thermoelectric generator,there is still a lack of effective high-temperature interface barrier material.This review focused on the interface problems faced in the application of bismuth telluride-based thermoelectric devic-es,highlighted the progress of related interface research,explained the mechanism of the interface's influence on the performance of the devices,and analyzed the effective strategies to improve the interface performance.

关键词

热电器件/界面性能/界面接触电阻/界面结合强度/扩散阻挡层

Key words

thermoelectric device/interface performance/contact resistance/interfacial bonding strength/barrier layer

分类

信息技术与安全科学

引用本文复制引用

武云笑,夏凯阳,胡惠平,张宇,付晨光,朱铁军..碲化铋基热电器件的界面研究进展[J].铜业工程,2024,(3):31-39,9.

基金项目

国家重点研发计划项目(2023YFB3809400) (2023YFB3809400)

浙江省自然科学基金委重大项目(LD22E020005)资助 (LD22E020005)

铜业工程

1009-3842

访问量4
|
下载量0
段落导航相关论文