物理学报2024，Vol.73Issue(15)：136-142,7.DOI:10.7498/aps.73.20240630
基于机械剥离制备的PEDOT:PSS/β-Ga2O3微米片异质结紫外光电探测器研究
Performance of UV photodetector of mechanical exfoliation prepared PEDOT:PSS/β-Ga2O3 microsheet heterojunction
摘要
Abstract
Ultrawide-bandgap(4.9 eV)β-Ga2O3 material possesses exceptional properties such as a high critical-breakdown field(～8 MV/cm)and robust chemical and thermal stability.However,due to the challenges in the growth of p-type β-Ga2O3,the preparation of homojunction devices is difficult.Therefore,the utilization of heterojunctions based on β-Ga2O3 provides a viable approach for fabricating ultraviolet photodetectors.Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS),a p-type organic polymer material,exhibits high transparency in a 250-700 nm wavelength range.Additionally,its remarkable conductivity(>1000 S/cm),high hole mobility(1.7 cm2·V-1·s-1),and excellent chemical stability make it an outstanding candidate for serving as a hole transport layer.Consequently,the combination of p-type PEDOT:PSS with n-type β-Ga2O3 in a heterojunction configuration provides a promising way for developing PN junction optoelectronic devices. In this study,a β-Ga2O3 microsheet with dimensions:4 mm in length,500 μm in width,and 57 μm in thickness,is successfully exfoliated from a β-Ga2O3 single crystal substrate by using a mechanical exfoliation technique.Subsequently,a PEDOT:PSS/β-Ga2O3 organic/inorganic p-n heterojunction UV photodetector is fabricated by depositing the PEDOT:PSS organic material onto a side of the β-Ga2O3 microsheet.The obtained device exhibits typical rectification characteristics,sensitivity to 254 nm ultraviolet light,and impressive self-powering performance.Furthermore,the heterojunction photodetector demonstrates exceptional photosensitive properties,achieving a responsivity of 7.13 A/W and an external quantum efficiency of 3484%under 254 nm UV light illumination(16 μW/cm2)at 0 V.Additionally,the device exhibits a rapid photoresponse time of 0.25 s/0.20 s and maintains good stability and repeatability over time.Notably,after a three-month duration,the photodetection performance for 254 nm UV light detection remained unchanged,without any significant degradation.This in-depth research provides a novel perspective and theoretical foundation for developing innovative UV detectors and paving the way for future advancements in the field of optoelectronics.关键词
β-Ga2O3/PEDOT:PSS/异质结/紫外光电探测器Key words
β-Ga2O3/PEDOT:PSS/heterojunction/UV photodetector引用本文复制引用
宜子琪,梁红伟,王彦明,王硕,隋雪,石佳辉,杨壹涵,王德煜,冯秋菊,孙景昌..基于机械剥离制备的PEDOT:PSS/β-Ga2O3微米片异质结紫外光电探测器研究[J].物理学报,2024,73(15):136-142,7.基金项目
国家自然科学基金(批准号:12075045)、大连市科技创新基金(批准号:2023JJ12GX016,2023JJ12GX013,2022JJ12GX023)、辽宁师范大学 2022年高端科研成果培育资助计划(批准号:22GDL002)和辽宁师范大学教育教学改革研究项目(批准号:LSJGJXFF202330)资助的课题.Project supported by the National Natural Science Foundation of China(Grant No.12075045),the Dalian Technological Innovation Fund Project,China(Grant Nos.2023JJ12GX016,2023JJ12GX013,2022JJ12GX023),the Liaoning Normal University 2022 Outstanding Research Achievements Cultivation Fund,China(Grant No.22GDL002),and the Liaoning Normal University Education Teaching Reform Research Project,China(Grant No.LSJGJXFF202330). （批准号:12075045）
