现代应用物理2024，Vol.15Issue(3)：105-111,119,8.DOI:10.12061/j.issn.2095-6223.2024.030601
NPN型双极晶体管中子位移损伤差异实验研究
Difference of Neutron Displacement Damage in NPN Bipolar Junction Transistor
摘要
Abstract
By using the steady-state neutrons of the Xi'an pulsed reactor(XAPR)to conduct neutron irradiation experiment on the NPN bipolar junction transistor(NPN-BJT),the difference of neutron displacement damage of NPN-BJT with different constant emitter current on XAPR is studied.The results show that under the same IE,the current gain degradation of the integrated NPN-BJT and the 2N2222A NPN-BJT gradually strengthens with the increase of irradiation neutron flux.Under the same neutron irradiation flux,the neutron radiation damage constant decreases with the increase of fixed constant emitter current,the variation of current gain before and after neutron irradiation diminishes,and the transistor current gain degradation decreases.Therefore,increasing constant emitter current IE can enhance the anti-neutron irradiation ability of NPN-BJT.关键词
NPN型双极晶体管/固定发射极电流/中子位移损伤/电流增益Key words
NPN bipolar junction transistor/constant emitter current/neutron displacement damage/current gain分类
信息技术与安全科学引用本文复制引用
刘炜剑,李瑞宾,王桂珍,白小燕,金晓明,刘岩,齐超,王晨辉,李俊霖..NPN型双极晶体管中子位移损伤差异实验研究[J].现代应用物理,2024,15(3):105-111,119,8.基金项目
国家自然科学基金资助项目(11835006) （11835006）
强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR2202) （SKLIPR2202）
