现代应用物理2024，Vol.15Issue(3)：120-131,12.DOI:10.12061/j.issn.2905-6223.2024.030603
栅场板型Ga2O3 MOSFET器件单粒子烧毁仿真研究
Simulation of Single Event Burnout in Gate-Field-Plated Ga2O3 MOSFET Devices
摘要
Abstract
A gate field plated Ga2O3 MOSFET device with enhanced resistance to single event burnout(SEB)is designed and compared with planar Ga2 O3 MOSFET devices.By utilizing commercial semiconductor device simulation software based on technology computer aided design(TCAD),the distribution characteristics of internal carrier concentration,current density,and other electrical parameters before and after SEB are studied for both devices.The mechanism of SEB in Ga2O3 MOSFET devices and the reason for the increased SEB threshold voltage after introducing the gate-field-plated structure are deeply studied.Based on this analysis,the device structure is optimized to obtain better resistance to SEB.The results show that the SEB mechanisms in both Ga2O3 MOSFET devices are primarily due to difficulties in achieving p-type doping internally,resulting in electron conduction.When the device is in the off-state,a depletion region forms beneath the gate,and the accumulation of electrons generated by heavy ion collision ionization significantly affects the opening of the electron channel in the substrate layer.During SEB occurrence,electrons from the source flow to the drain through a"V"-shaped electron channel,causing a short circuit and resulting in high current flow and device burnout.Compared to planar Ga2O3 MOSFET devices,the introduction of the gate-field-plated structure reduces the peak electric field intensity in the channel region from 2.9 MV·cm-1 to 1.7 MV·cm-1,thereby decreasing the rate of carrier generation due to collision ionization after heavy ion irradiation.Additionally,the gate field plate Ga2O3 MOSFET device enlarges the depletion region,enhancing the control capability of the gate,and increasing the SEB threshold voltage from 110 V to 340 V.Finally,through simulation optimization of the SiO2 passivation layer thickness and the gate field plate length,device structure parameters with stronger resistance to SEB are obtained,further increasing the SEB threshold voltage to 380 V.关键词
Ga2O3金属氧化物半导体场效应晶体管/栅场板/单粒子烧毁/TCAD仿真Key words
Ga2O3 MOSFET/gate field plate structure/single event burnout/TCAD simulation分类
信息技术与安全科学引用本文复制引用
刘涵勋,汪柯佳,曹荣幸,韩丹,王祖军,曾祥华,薛玉雄..栅场板型Ga2O3 MOSFET器件单粒子烧毁仿真研究[J].现代应用物理,2024,15(3):120-131,12.基金项目
强脉冲辐射环境模拟与效应全国重点实验室基金资助项目(SKLIPR2115) （SKLIPR2115）
