Dy3+,Tb3+共掺氮化铝薄膜结构与发光特性OA北大核心CSTPCD

For the first time,Tb3+and Dy3+co-doped AlN films were prepared using ion implantation,and their crystal structure,cathodoluminescence properties and energy transfer mechanism were investigated.Ra-man scattering and X-ray diffraction results indicate that ion implantation of Dy3+has caused increased com-pressive stress within the internal lattice when the dosage of Tb3+remains constant.Continuous implantation led to the recombination of some point defects,resulting in a partial release of internal compressive stress.Cathodoluminescence spectra demonstrated that with high-dose Tb3+implantation,the emission intensities of Tb3+and Dy3+exhibited different trends with increasing Dy3+dosage.We propose the existence of a reson-ance energy transfer from Tb3+ions 5D4→7F6 to Dy3+ions 6H15/2→4F9/2 in AlN films.Finally,we observe that under different implantation dose of Dy3+ions to Tb3+ions,the emission color of the sample shifts between yellow-green and orange-yellow,with color temperatures ranging from 4042 to 5119K.Adjusting the dose ratio of Dy3+to Tb3+enables effective control of chromaticity coordinates and color temperatures.