电磁干扰环境MOS器件可靠性表征方法研究OACSTPCD

The reliability characterization of industrial-chip-featured MOS devices typically involves accelerated life tests based on con-stant voltage stress or voltage ramp stress methods,followed by lifetime evaluation based on the test results.As test conditions for these methods are relatively simple,they fail to satisfy the requirements of the common electromagnetic interference environments faced by industrial chips.The degradation of MOS devices in real scenarios is challenging to effectively delineate,thereby affecting the precise assessment of the operation state of chips.In this research,we propose a MOS device life assessment method from a micro perspective,combined with TCAD simulation software,to predict the life of MOS devices under electromagnetic interference environments.The method effectively avoids the error feedback caused by fluctuations on device outputs.The device life predicted here is somewhat conser-vative,which,to a greater extent,ensures the stable operation of chips in electromagnetic environments.