集成电路与嵌入式系统2024，Vol.24Issue(8)：29-34,6.DOI:10.20193/j.ices2097-4191.2024.0012
电磁干扰环境MOS器件可靠性表征方法研究
Research on reliability characterization method for MOS devices under electromagnetic interference environment
摘要
Abstract
The reliability characterization of industrial-chip-featured MOS devices typically involves accelerated life tests based on con-stant voltage stress or voltage ramp stress methods,followed by lifetime evaluation based on the test results.As test conditions for these methods are relatively simple,they fail to satisfy the requirements of the common electromagnetic interference environments faced by industrial chips.The degradation of MOS devices in real scenarios is challenging to effectively delineate,thereby affecting the precise assessment of the operation state of chips.In this research,we propose a MOS device life assessment method from a micro perspective,combined with TCAD simulation software,to predict the life of MOS devices under electromagnetic interference environments.The method effectively avoids the error feedback caused by fluctuations on device outputs.The device life predicted here is somewhat conser-vative,which,to a greater extent,ensures the stable operation of chips in electromagnetic environments.关键词
电磁干扰/MOS器件/TCAD仿真/可靠性理论Key words
electromagnetic interference/MOS devices/TCAD simulation/reliability theory分类
信息技术与安全科学引用本文复制引用
朱亚星,连亚军,赵东艳,陈燕宁,刘芳,吴波,王凯,郁文,王柏清,宋斌斌..电磁干扰环境MOS器件可靠性表征方法研究[J].集成电路与嵌入式系统,2024,24(8):29-34,6.基金项目
北京智芯微电子科技有限公司项目—面向BCD工艺核心器件可靠性仿真方法研究. （）
