纳秒级方波脉冲对稳压二极管损伤特性的研究OA

Aiming at the problem that the transient overvoltage generated by strong electromagnetic pulse will cause damage to the diode semiconductor,based on the diode breakdown theory,the method of com-bining theory and experiment is adopted,and the nanosecond high-voltage square wave pulse source is used as the voltage pulse source,and the BZX55C series of different types of regulated diodes is selected for square wave pulse injection experiments with different pulse widths.The experimental results show that the damage energy of the regulator diode increases with the increase of the regulation value of the reg-ulator diode,and the damage form is manifested as the voltage regulation value decreases,the leakage current increases,and the volt-ampere characteristic curve is distorted.Diodes with different regulator values have different sensitive ends of the wave pulse,when the regulator value is less than 12 V,the negative electrode is more sensitive,and when the regulator value is greater than 12 V,the positive elec-trode is more sensitive;Diode damage energy is not a constant value,as the pulse width increases,the damage energy threshold decreases,and the pulse duration should be reduced while limiting the pulse amplitude when designing the diode device for protection.The research results have certain reference val-ue for the protection of diode semiconductors.