电瓷避雷器Issue(4)：64-70,7.DOI:10.16188/j.isa.1003-8337.2024.04.008
TiO2掺杂对ZnO压敏电阻性能的影响
Effect of TiO2 Doping on Properties of ZnO Varistor
吴育聪 1任鑫 1孙岩 1杨莉禹 1宁宇 1姚政1
作者信息
- 1. 上海大学理学院纳米科学与技术研究中心,上海2000444
- 折叠
摘要
Abstract
The effect of TiO2 doping on the comprehensive electrical properties and degradation behavior of ZnO varistor were investigated.The crystal phase composition,microstructure and comprehensive elec-trical properties of the product were tested and characterized.It is found that the sample E4 with 0.4％(mol fraction,the same below)doping exhibits better overall performance,and its potential gradient de-creases from 180.2 V/mm to 147.3 V/mm,α=83.8,IL=0.38 mA.With 20 pulses of 20 kA,the poten-tial gradient decreased,and the samples doped with TiO2 showed the best performance in E4.-5.64％for％△E1mA+and-4.71％for％△E1mA-,the aging coefficient Kct value is 0.75,the power consumption is greatly reduced,showing good electrical performance,and the invention is more suitable for long-term operation in circuits.关键词
ZnO压敏电阻/TiO2/电学性能Key words
ZnO varistor/TiO2/electrical properties引用本文复制引用
吴育聪,任鑫,孙岩,杨莉禹,宁宇,姚政..TiO2掺杂对ZnO压敏电阻性能的影响[J].电瓷避雷器,2024,(4):64-70,7.
