TiO2掺杂对ZnO压敏电阻性能的影响OA

The effect of TiO2 doping on the comprehensive electrical properties and degradation behavior of ZnO varistor were investigated.The crystal phase composition,microstructure and comprehensive elec-trical properties of the product were tested and characterized.It is found that the sample E4 with 0.4％(mol fraction,the same below)doping exhibits better overall performance,and its potential gradient de-creases from 180.2 V/mm to 147.3 V/mm,α=83.8,IL=0.38 mA.With 20 pulses of 20 kA,the poten-tial gradient decreased,and the samples doped with TiO2 showed the best performance in E4.-5.64％for％△E1mA+and-4.71％for％△E1mA-,the aging coefficient Kct value is 0.75,the power consumption is greatly reduced,showing good electrical performance,and the invention is more suitable for long-term operation in circuits.