基于电-热-结构耦合分析的SiC MOSFET可靠性研究OA
Reliability study of SiC MOSFET based on electro-thermo-structural coupling analysis
作为应用前景广阔的功率器件,SiC金属氧化物半导体场效应晶体管(MOSFET)的可靠性分析至关重要.基于结构几何、材料特性和边界条件的建模方法可以显著缩短失效分析周期.考虑器件电阻随温度变化的特性,构建电-热-结构耦合的有限元模型,针对健康状态及不同失效模式进行温度和应力研究.结果表明,功率循环过程中键合线与芯片连接处受到的热应力最大,焊料层与芯片接触面的边缘位置次之;键合线失效对器件寿命影响最大,且焊料层中心空洞产生的应力大于边缘空洞产生的应力…查看全部>>
As a power device with promising applications,the reliability analysis of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)is crucial.Modeling methods based on structural geometry,material properties,and boundary conditions can significantly shorten the failure analysis cycle.A coupled electrico-thermo-structural finite element model is constructed,considering the temperature-dependent characteristics of the device resistance.Temperature and stre…查看全部>>
黄天琪;刘永前
华北电力大学新能源学院,北京 102206华北电力大学新能源学院,北京 102206
SiC金属氧化物半导体场效应晶体管(MOSFET)有限元模型电-热-结构耦合键合线失效焊料层失效
SiC metal-oxide-semiconductor field-effect transistor(MOSFET)finite element modelelectro-thermo-structural couplingbond wire failuresolder layer failure
《电气技术》 2024 (8)
27-34,8
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