湖南大学学报（自然科学版）2024，Vol.51Issue(8)：101-108,8.DOI:10.16339/j.cnki.hdxbzkb.2024282
基于GaAs HBT的C波段RLC负反馈功率放大器设计
Design of C-Band RLC Negative Feedback Power Amplifier Based on GaAs HBT
摘要
Abstract
A linear negative feedback power amplifier(PA)based on gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)in the C-band is proposed.The design employs a three-stage common emitter(CE)structure and utilizes two different active linear biases to enhance the linearity of the PA.Simultaneously,an RLC negative feedback network is incorporated to improve stability and broaden the operational bandwidth.Addressing the issue of gain reduction in traditional feedback network structures,the RLC negative feedback network can effectively mitigate the impact of gain reduction induced by feedback by adjusting the inductance values within the feedback network.Test results demonstrate that,at room temperature,within the frequency range of 5.1 GHz to 7.4 GHz,a gain exceeding 28 dB is achieved.In the linear operating frequency range of 5.9 GHz to 7.1 GHz,the average gain is 29.5 dB,and both S11 and S22 are less than-10 dB.Complying with the wireless LAN standard 802.11a,a 20 MHz 64-QAM signal is utilized and the output power achieving an EVM of-30 dB ranges from 18.9 dBm to 22.5 dBm.Between 5.9 GHz and 6.2 GHz,the saturated output power exceeds 30 dBm,and the maximum power added efficiency(PAE)is greater than 35%.关键词
功率放大器/负反馈/异质结双极晶体管(HBT)Key words
power amplifier/negative feedback/heterojunction bipolar transistor(HBT)分类
信息技术与安全科学引用本文复制引用
傅海鹏,姚攀辉..基于GaAs HBT的C波段RLC负反馈功率放大器设计[J].湖南大学学报（自然科学版）,2024,51(8):101-108,8.基金项目
国家自然科学基金资助项目(62074110),National Natural Science Foundation of China(62074110) （62074110）
国家重点研发计划资助项目(2018YFB2202500),National Key Research and Development Program of China(2018YFB2202500) （2018YFB2202500）
