电源学报2024，Vol.22Issue(4)：1-11,11.DOI:10.13234/j.issn.2095-2805.2024.4.1
SiC MOSFET器件栅氧可靠性研究综述
Review on Gate Oxide Reliability of SiC MOSFET Devices
胡嘉豪 1王英伦 1代豪豪 1邓小川 1张波1
作者信息
- 1. 电子科技大学集成电路科学与工程学院,成都 610054
- 折叠
摘要
Abstract
Silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET)has attracted attention from the industry owing to its excellent characteristics such as high voltage,high frequency and low conduction loss.However,compared with the silicon-based IGBT,the problem of gate oxide reliability caused by the high defect density at the SiC/SiO2 gate oxide interface has become a key bottleneck restricting the large-scale applications of SiC MOSFET devices.By sorting out and analyzing the research results of the gate oxide reliability of SiC MOSFET at home and abroad in recent years,the causes of the gate oxide reliability problems at present were elaborated upon,and various commonly-used gate oxide reliability evaluation methods were summarized and compared.Finally,the gate oxide reliability of SiC MOSFET under extreme operating conditions and the development status of technologies for improving its performance were discussed.关键词
碳化硅金属氧化物半导体场效应晶体管/栅氧可靠性/评估方法/极端工况Key words
Silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET)/gate oxide reliability/evaluation method/extreme operating condition分类
信息技术与安全科学引用本文复制引用
胡嘉豪,王英伦,代豪豪,邓小川,张波..SiC MOSFET器件栅氧可靠性研究综述[J].电源学报,2024,22(4):1-11,11.
